At an interface between two materials physical properties and functionalities may be
achieved, which would not exist in either material alone. Epitaxial inorganic interfaces are at …

In this paper, we conducted a theoretical investigation on the structural, electronic and
optical properties of (InAs) m/(GaSb) n superlattices (mn: 1-1, 2-2, 1–3 and 3–1), using the …

Empirical tight-binding (ETB) methods have become a common choice to simulate electronic
and transport properties for systems composed of thousands of atoms. However, their …

Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials
for infrared detection due to their excellent photoelectric properties and flexible and …

We report the determination of parameters for the nearest-neighbor sp 3 s* tight-binding (TB)
model for GaP, GaAs, GaSb, InP, InAs, and InSb at 0, 77, and 300 K based on the hybrid …

For photosensitive devices such as infrared (IR) photodetectors, dark current is an important
mechanism limiting the performance because it causes a decrease in the signal-to-noise …

We report determination of parameters in the nearest-neighbor sp 3 d 5 s* tight-binding (TB)
model for nine binary compound semiconductors which consist of Al, Ga, or In and of P, As …

Recent studies suggest that the many-body perturbation theory in the partially self-consistent
GW (GW 0) approximation significantly improves the prediction of band gaps in various …

We apply the quasiparticle self-consistent GW method (QSGW) to slab models of ionic
materials—LiF, KF, NaCl, MgO, and CaO—under electric field. Then we obtain the optical …

Abstract Ga x In1− x As–GaAs y Sb1− y type-II superlattices (T2SLs) have recently received
broad attention as an InP-based optical absorption layer in short-wavelength infrared …