The phenomenon of electron tunnelling has been known since the advent of quantum
mechanics, but continues to enrich our understanding of many fields of physics, as well as …

In the past few years the phenomenon of spin-dependent tunneling (SDT) in magnetic
tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous …

Insertion of a thin nonmagnetic copper Cu (001) layer between the tunnel barrier and the
ferromagnetic electrode of a magnetic tunnel junction is shown to result in the oscillation of …

Resonant tunneling via localized states in the barrier can invert magnetoresistance in
magnetic tunnel junctions. Experiments performed on electrodeposited N i/N i O/C o …

Scientific investigations to understand the fascinating behavior of thin magnetic films
originating from fundamental quantum mechanical properties and particular spin coupling …

First-principles density-functional calculations of the atomic and electronic structure of C o/S
r T i O 3/Co (001) magnetic tunnel junctions (MTJ's) are performed. Different interface …

This paper presents recent experimental advances in the field of nanomagnetism and spin
electronics. It covers the period of the last decades during which fundamental discoveries …

We exploit the process of asymmetry amplification by stimulated emission which provides an
original method for parity violation (PV) measurements in a highly forbidden atomic …

We demonstrate that the factorization of the tunneling transmission into the product of two
surface transmission functions and a vacuum decay factor allows one to generalize Jullière's …

Magnetoresistance (MR) measurements up to 50 T have been performed in the half-metallic
polycrystalline (Ba 0.8 Sr 0.2) 2 FeMoO 6 double perovskite in the temperature range 4.2 K …