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Mechanism of terahertz lasing in SiGe/Si quantum wells
A Blom, MA Odnoblyudov, HH Cheng… - Applied Physics …, 2001 - pubs.aip.org
Intense terahertz (THz) stimulated emission from boron-doped SiGe/Si quantum well
structures with internal strain has been observed recently. We present a theoretical …
structures with internal strain has been observed recently. We present a theoretical …
Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors.
MS Kagan, I Altukhov, V Sinis, E Chirkova… - ECS …, 2006 - iopscience.iop.org
The origin and properties of stimulated terahertz (THz) emission in uniaxially compressed p-
Ge and strained SiGe/Si quantum-well structures doped with shallow acceptors are …
Ge and strained SiGe/Si quantum-well structures doped with shallow acceptors are …
[PDF][PDF] Impurity States and Atomic Systems Confined in Nanostructures
R Riera, R Betancourt-Riera, JL Marin… - … of Nanoscience and …, 2004 - researchgate.net
The real confined systems, also called low-dimensional systems or nanostructures, are any
three-dimensional quantum systems in which the carriers are free to move in only two, one …
three-dimensional quantum systems in which the carriers are free to move in only two, one …
Impurity photoconductivity in SiGe/Si: B multi-quantum-well heterostructures
VY Aleshkin, AV Antonov, VI Gavrilenko… - Physica B: Condensed …, 2003 - Elsevier
A new theoretical method for calculation of acceptor energy spectra in Si/SiGe quantum well
heterostructures, taking into account the anisotropy effects has been developed. The …
heterostructures, taking into account the anisotropy effects has been developed. The …
Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures
MS Kagan, IV Altukhov, VP Sinis… - … status solidi (b), 2007 - Wiley Online Library
The evolution of THz emission, current and probe voltage in SiGe‐QW laser structures at the
leading front of voltage pulse was studied. The excitation of stimulated THz emission is …
leading front of voltage pulse was studied. The excitation of stimulated THz emission is …
Transient Characteristics of SiGe/Si QW Structures at THz Lasing
MS Kagan, IV Altukhov, SK Paprotskiy… - International Journal …, 2007 - World Scientific
TRANSIENT CHARACTERISTICS OF SiGe/Si QW STRUCTURES AT THz LASING Page 1
October 30, 2007 11:58 00472 International Journal of Nanoscience Vol. 6, Nos. 3 & 4 (2007) …
October 30, 2007 11:58 00472 International Journal of Nanoscience Vol. 6, Nos. 3 & 4 (2007) …
[PDF][PDF] Shallow acceptors in Si/SiGe QW heterostructures
DV Kozlov - PSC 802 BOX 14, 2002 - researchgate.net
Shallow acceptors in Si/SiGe QW heterostructures Page 222 10th Int. Symp.“Nanostructures:
Physics and Technology” SBNS. 06p St Petersburg, Russia, June 17–21, 2002 © 2002 Ioffe …
Physics and Technology” SBNS. 06p St Petersburg, Russia, June 17–21, 2002 © 2002 Ioffe …
Different physics for edge and centre delta-do** into a QW
HH Cheng, A Dalakyan, ZP Yang… - … of CAOL 2005 …, 2005 - ieeexplore.ieee.org
This study measured the absorption spectra of a centre and an edge delta-doped boron into
the quantum wells (QWs). The samples used were MBE grown Si/Si/sub 0.88//Ge/sub …
the quantum wells (QWs). The samples used were MBE grown Si/Si/sub 0.88//Ge/sub …
[ОПИСАНИЕ][C] Shallow acceptors in Si/SiGe quantum well heterostructures
VY Aleshkin, VI Gavrilenko… - physica status solidi (c), 2003 - Wiley Online Library
Shallow acceptors in Si/SiGe quantum well heterostructures Page 1 phys. stat. sol. (c) 0, No. 2,
687–689 (2003) / DOI 10.1002/pssc.200306183 © 2003 WILEY-VCH Verlag GmbH & Co …
687–689 (2003) / DOI 10.1002/pssc.200306183 © 2003 WILEY-VCH Verlag GmbH & Co …
[ОПИСАНИЕ][C] THz Spectroscopy of Extremely Shallow Acceptor States in Ge/GeSi Multiple-Quantum-Well Heterostructures
OA KUZNETSOV, DB VEKSLER