Electronic technologies that can operate in harsh radiation environments are important in
space, nuclear and avionic applications. However, radiation-hardened (rad-hard) integrated …

In response to the 2013 Update of the European Strategy for Particle Physics (EPPSU), the
Future Circular Collider (FCC) study was launched as a world-wide international …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …

This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk
Si FinFETs at ultrahigh doses. n-and p-FinFETs with several channel lengths are irradiated …

This work presents a new SOI 14 nm heterojunction FinFET with Si 1-x Ge x fin for low-
power digital logic circuits. The channel region of the proposed device consists of Si 1-x Ge …

Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-
length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm …

We provide comprehensive experimental data and technology computer-aided design
(TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n …

Bulk 14-nm FinFET technology was irradiated in a heavy-ion environment (42-MeV Si ions)
to study the possibility of displacement damage (DD) in scaled technology devices, resulting …

The introduction of Field Effect Transistor (FinFET) Technology played a leading contender
in today microelectronics. FinFET structure allows to scale the device at sub-nanometer …