Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …

In the present paper, reported literature data on the grain-size dependence of resistivity of Ni
and Cu are critically evaluated by two conceptually different methods. One is the …

A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

Grain boundaries (GBs) in metals usually increase electrical resistivity due to their distinct
atomic arrangement compared to the grain interior. While the GB structure has a crucial …

Copper is the current interconnect metal of choice in integrated circuits. As interconnect
dimensions decrease, the resistivity of copper increases dramatically because of electron …

The resistance of copper grain boundaries (GBs) is calculated systematically through a full
atomistic quantum approach. A set of twin GBs, including the coherent twin GB, is generated …

The electron reflection probability r at symmetric twin boundaries Σ3, Σ5, Σ9, and Σ11 is
predicted from first principles for the eight most conductive face-centered cubic (fcc) metals. r …

The resistance of doped single grain boundaries (GBs) in copper is calculated from first
principles and systematically compared to its pure single GB equivalent. As a first step, a …

The resistivity of 9.3-nm-thick epitaxial and polycrystalline Cu is reduced by 11%–13% when
coated with 0.75 nm Ni. Sequential in situ and ex situ transport measurements show that this …

Four-point probe characterization is a standard method for studying the electrical properties
of solids and thin films. The probe spacing in four-point probe technique has to be reduced …