Applications of Photoluminescence Spectroscopy to the Investigation of Oxide‐Containing Catalysts in the Working State
M Anpo, S Dzwigaj, M Che - Advances in catalysis, 2009 - Elsevier
This chapter is an update of an earlier version (Adv. Catal. 44, 119 (1999)) devoted to the
applications of photoluminescence (PL) spectroscopy to the characterization of solid …
applications of photoluminescence (PL) spectroscopy to the characterization of solid …
Thermoelectric properties of highly-mismatched alloys of GaN x As 1− x from first-to second-principles methods: energy conversion
AH Reshak - RSC advances, 2016 - pubs.rsc.org
The transport properties of GaNxAs1− x (x= 0.0, 0.25, 0.5, 0.75 and 1.0) alloys are
investigated using the semi-classical Boltzmann theory as implemented in the BoltzTraP …
investigated using the semi-classical Boltzmann theory as implemented in the BoltzTraP …
Photoluminescence (PL) Spectroscopy
Q Li, M Anpo, J You, T Yan, X Wang - Springer Handbook of Advanced …, 2023 - Springer
This chapter deals with the fundamental of the photoluminescence (PL) spectroscopy and its
applications to study the chemical reaction of molecules on solid surfaces and the reactivity …
applications to study the chemical reaction of molecules on solid surfaces and the reactivity …
Structural and electronic properties of GaN x As1−x alloys
The structural and electronic properties of cubic GaN x As 1− x with N-concentration varying
between 0.0 and 1.0 with step of 0.25 were investigated using the full potential–linearized …
between 0.0 and 1.0 with step of 0.25 were investigated using the full potential–linearized …
High temperature and power dependent photoluminescence analysis on commercial lighting and display LED materials for future power electronic modules
Commercial light emitting diode (LED) materials-blue (ie, InGaN/GaN multiple quantum
wells (MQWs) for display and lighting), green (ie, InGaN/GaN MQWs for display), and red (ie …
wells (MQWs) for display and lighting), green (ie, InGaN/GaN MQWs for display), and red (ie …
Band-gap energy of as a function of N content
The band-gap energy of InGaNAs decreases with N content at a smaller rate than that of
GaNAs. Precise absorption measurements in strained InGaNAs/GaAs quantum wells on …
GaNAs. Precise absorption measurements in strained InGaNAs/GaAs quantum wells on …
Systematic investigation of spontaneous emission quantum efficiency drop up to 800 K for future power electronics applications
Future high-density power electronics applications may require high-temperature
optoelectronic devices for gate drive. Thus, a systematic study of optoelectronic material …
optoelectronic devices for gate drive. Thus, a systematic study of optoelectronic material …
Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content
The optical properties of GaInNAs/GaAs multi-quantum wells were investigated by
photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL) …
photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL) …
Impact of carrier localization on the photoluminescence characteristics of (Ga, In)(N, As) and (Ga, In)(N, As, Sb) quantum wells
Using photoluminescence (PL) spectroscopy, we carry out a comparative study of the optical
properties of (Ga, In)(N, As) and (Ga, In)(N, As, Sb) quantum wells. The incorporation of Sb …
properties of (Ga, In)(N, As) and (Ga, In)(N, As, Sb) quantum wells. The incorporation of Sb …
Effect of nitrogen on the band structure and material gain of In/sub y/Ga/sub 1-y/As/sub 1-x/Nx-GaAs quantum wells
The conduction subband structure of InGaAsN-GaAs quantum wells (QWs) is calculated
using the band anticrossing model, and its influence on the design of long-wavelength …
using the band anticrossing model, and its influence on the design of long-wavelength …