2D materials for spintronic devices

EC Ahn - npj 2D Materials and Applications, 2020 - nature.com
Abstract 2D materials are attractive for nanoelectronics due to their ultimate thickness
dimension and unique physical properties. A wide variety of emerging spintronic device …

The role of contact resistance in graphene field-effect devices

F Giubileo, A Di Bartolomeo - Progress in Surface Science, 2017 - Elsevier
The extremely high carrier mobility and the unique band structure, make graphene very
useful for field-effect transistor applications. According to several works, the primary …

Spintronics in two-dimensional materials

Y Liu, C Zeng, J Zhong, J Ding, ZM Wang, Z Liu - Nano-Micro Letters, 2020 - Springer
Spintronics, exploiting the spin degree of electrons as the information vector, is an attractive
field for implementing the beyond Complemetary metal-oxide-semiconductor (CMOS) …

Hybrid spintronic materials: Growth, structure and properties

W Liu, PKJ Wong, Y Xu - Progress in Materials Science, 2019 - Elsevier
Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or
in addition to charge-only-based physical phenomena. Since the discovery of giant …

Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure

W Yan, E Sagasta, M Ribeiro, Y Niimi, LE Hueso… - Nature …, 2017 - nature.com
Electrical generation and detection of pure spin currents without the need of magnetic
materials are key elements for the realization of full electrically controlled spintronic devices …

Recent advancements in 2D-materials interface based magnetic junctions for spintronics

MZ Iqbal, NA Qureshi, G Hussain - Journal of Magnetism and Magnetic …, 2018 - Elsevier
Abstract Two-dimensional (2D) materials comprising of graphene, hexagonal boron nitride
(hBN) and transition metal dichalcogenides (TMDs) have revealed fascinating properties in …

Charge-Induced Artifacts in Nonlocal Spin-Transport Measurements: How to Prevent Spurious Voltage Signals

F Volmer, T Bisswanger, A Schmidt, C Stampfer… - Physical Review …, 2022 - APS
To conduct spin-sensitive transport measurements, a nonlocal device geometry is often
used to avoid spurious voltages that are caused by the flow of charges. However, in the vast …

[書籍][B] Spintronics: Theory, Modelling, Devices

T Blachowicz, A Ehrmann - 2024 - books.google.com
Spintronics, being a part of electronics, is under intense development for about forty years
and mainly concerns transport of electronics spin in low-dimensional structures. This field …

Alumina tunnel contact based lateral spin-Field effect transistor

N Gyanchandani, P Maheshwary, K Nemade - Materials Science and …, 2022 - Elsevier
In the present work, modified Datta and Das Type silicon based lateral spin-Field Effect
Transistor (MDD Type s-FET) is presented with alumina as tunnel contact. The insertion of …

[HTML][HTML] Effect of the low-resistance tunnel barriers induced inhomogeneous spin current distribution in graphene crossed configuration lateral spin valve

Y Liu, C Zeng, J Ding, J Zhong, Y Gao, X Kuang, J Yu… - AIP Advances, 2019 - pubs.aip.org
The nonlocal spin valve configuration consists of two ferromagnetic and nonmagnetic
channels, which is an effective configuration for determining spin injection and …