2D materials for spintronic devices
EC Ahn - npj 2D Materials and Applications, 2020 - nature.com
Abstract 2D materials are attractive for nanoelectronics due to their ultimate thickness
dimension and unique physical properties. A wide variety of emerging spintronic device …
dimension and unique physical properties. A wide variety of emerging spintronic device …
The role of contact resistance in graphene field-effect devices
The extremely high carrier mobility and the unique band structure, make graphene very
useful for field-effect transistor applications. According to several works, the primary …
useful for field-effect transistor applications. According to several works, the primary …
Spintronics in two-dimensional materials
Spintronics, exploiting the spin degree of electrons as the information vector, is an attractive
field for implementing the beyond Complemetary metal-oxide-semiconductor (CMOS) …
field for implementing the beyond Complemetary metal-oxide-semiconductor (CMOS) …
Hybrid spintronic materials: Growth, structure and properties
Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or
in addition to charge-only-based physical phenomena. Since the discovery of giant …
in addition to charge-only-based physical phenomena. Since the discovery of giant …
Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure
Electrical generation and detection of pure spin currents without the need of magnetic
materials are key elements for the realization of full electrically controlled spintronic devices …
materials are key elements for the realization of full electrically controlled spintronic devices …
Recent advancements in 2D-materials interface based magnetic junctions for spintronics
Abstract Two-dimensional (2D) materials comprising of graphene, hexagonal boron nitride
(hBN) and transition metal dichalcogenides (TMDs) have revealed fascinating properties in …
(hBN) and transition metal dichalcogenides (TMDs) have revealed fascinating properties in …
Charge-Induced Artifacts in Nonlocal Spin-Transport Measurements: How to Prevent Spurious Voltage Signals
To conduct spin-sensitive transport measurements, a nonlocal device geometry is often
used to avoid spurious voltages that are caused by the flow of charges. However, in the vast …
used to avoid spurious voltages that are caused by the flow of charges. However, in the vast …
[書籍][B] Spintronics: Theory, Modelling, Devices
T Blachowicz, A Ehrmann - 2024 - books.google.com
Spintronics, being a part of electronics, is under intense development for about forty years
and mainly concerns transport of electronics spin in low-dimensional structures. This field …
and mainly concerns transport of electronics spin in low-dimensional structures. This field …
Alumina tunnel contact based lateral spin-Field effect transistor
In the present work, modified Datta and Das Type silicon based lateral spin-Field Effect
Transistor (MDD Type s-FET) is presented with alumina as tunnel contact. The insertion of …
Transistor (MDD Type s-FET) is presented with alumina as tunnel contact. The insertion of …
[HTML][HTML] Effect of the low-resistance tunnel barriers induced inhomogeneous spin current distribution in graphene crossed configuration lateral spin valve
Y Liu, C Zeng, J Ding, J Zhong, Y Gao, X Kuang, J Yu… - AIP Advances, 2019 - pubs.aip.org
The nonlocal spin valve configuration consists of two ferromagnetic and nonmagnetic
channels, which is an effective configuration for determining spin injection and …
channels, which is an effective configuration for determining spin injection and …