GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

Significant progress has been made in the advancement of light-emitting devices in both the
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …

Fundamentally secure quantum cryptography has still not seen widespread application
owing to the difficulty of generating single photons on demand. Semiconductor quantum-dot …

In a classical light source, such as a laser, the photon number follows a Poissonian
distribution. For quantum information processing and metrology applications, a non-classical …

Abstract Temperature-dependent photoluminescence (TDPL), one of the most effective and
powerful optical characterisation methods, is widely used to investigate carrier transport and …

We present an atomistic description of the electronic and optical properties of In 0.25 Ga
0.75 N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy …

We have studied the low-temperature (T= 6 K) optical properties of a series of In Ga N∕ Ga
N single-quantum-well structures with varying indium fractions. With increasing indium …

Urbach tails in semiconductors are often associated to effects of compositional disorder. The
Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased …

We present an eight-band k∙ p-model for the calculation of the electronic structure of wurtzite
semiconductor quantum dots (QDs) and its application to indium gallium nitride (In x Ga 1− x …

There is a great deal of interest in the underlying causes of efficiency droop in InGaN/GaN
quantum well light emitting diodes, with several physical mechanisms being put forward to …