[BUCH][B] Bulk crystal growth of electronic, optical and optoelectronic materials
P Capper - 2005 - books.google.com
A valuable, timely book for the crystal growth community, edited by one of the most
respected members in the field. Contents cover all the important materials from silicon …
respected members in the field. Contents cover all the important materials from silicon …
Flow instability during crystal growth from the melt
K Kakimoto - Progress in crystal growth and characterization of …, 1995 - Elsevier
Quality of semiconductor and oxide crystals grown from the melts in Czochralski crystal
growth systems is significantly affected by the heat and mass transfer in the melts during …
growth systems is significantly affected by the heat and mass transfer in the melts during …
Convection in melt growth
G Müller, A Ostrogorsky - Handbook of Crystal Growth, 1994 - books.google.com
2. Origins and effects of convection in various melt growth configurations 2.1. Origins of
convective phenomena. 2.2. Effects of buoyancy convection.------2.3. Natural and forced …
convective phenomena. 2.2. Effects of buoyancy convection.------2.3. Natural and forced …
[HTML][HTML] Development and validation of a thermal simulation for the Czochralski crystal growth process using model experiments
The Czochralski (CZ) process is one of the most important techniques for the production of
bulk single crystals. Various numerical models for CZ growth furnaces exist, however, a …
bulk single crystals. Various numerical models for CZ growth furnaces exist, however, a …
Role of Marangoni convection in Si–Czochralski melts—Part II: 3D predictions with crystal rotation
V Kumar, B Basu, S Enger, G Brenner, F Durst - Journal of Crystal Growth, 2003 - Elsevier
Several fluid mechanical instabilities originate due to buoyancy, surface tension and
rotational forces in a Czochralski (Cz) crystal growth process. The origin of the flow …
rotational forces in a Czochralski (Cz) crystal growth process. The origin of the flow …
Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by x-ray radiography and large-scale computation
Control of melt flow during Czochralski (CZ) crystal growth by application of magnetic fields
is an important technique for large-diameter (> 300 mm) silicon single crystals. Melt …
is an important technique for large-diameter (> 300 mm) silicon single crystals. Melt …
DNS of rotating buoyancy–and surface tension–driven flow
The combination of turbulent buoyant flow with a free surface (Rayleigh–Bénard–Marangoni
convection) and rotation is hardly investigated in detail, especially for low Prandtl number …
convection) and rotation is hardly investigated in detail, especially for low Prandtl number …
Flow and temperature field in molten silicon during Czochralski crystal growth in a cusp magnetic field
M Watanabe, M Eguchi, T Hibiya - Journal of crystal growth, 1998 - Elsevier
Flow behavior of molten silicon and the oxygen-concentration distribution in crystals grown
under three different types of cusp magnetic field (CMF) configuration were observed in …
under three different types of cusp magnetic field (CMF) configuration were observed in …
Three-dimensional oscillatory convection of LiCaAlF6 melts in Czochralski crystal growth
Three-dimensional (3D) unsteady mixed thermal buoyancy, Marangoni and forced
convection of LiCaAlF6 (LiCAF) melts (Prandtl number Pr≈ 1.4) are investigated …
convection of LiCaAlF6 (LiCAF) melts (Prandtl number Pr≈ 1.4) are investigated …
Oxygen transport from a silica crucible in Czochralski silicon growth
S Togawa, K Izunome, S Kawanishi, SI Chung… - Journal of crystal …, 1996 - Elsevier
In this work, Czochralski silicon crystals were grown from a limited oxygen source crucible to
determine the dominant flow of oxygen transport in silicon melt. The oxygen concentration in …
determine the dominant flow of oxygen transport in silicon melt. The oxygen concentration in …