Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for
the development of nonvolatile magnetic memory and computing technologies due to their …

Spin textures, such as magnetic domain walls and skyrmions, have the potential to
revolutionize electronic devices by encoding information bits. Although recent …

Electrically manipulating magnetic moments by spin–orbit torque (SOT) has great potential
applications in magnetic memories and logic devices. Although there have been rich SOT …

Perpendicular magnetization switching by a magnetic-field-free, energy-efficient electrical
approach has remained a great challenge. Here, we demonstrate the realization of robust …

Magnetization in a ferromagnetic layer could be manipulated by the spin-orbit torque whose
generation commonly relies on the spin-orbit coupling from the adjacent heavy-metal layer …

With the advent of the Big Data era, neuromorphic computing (NC)(also known as brain‐
inspired computing) has gained a lot of research interest. Spintronic devices are the …

Ir-CoFeB-based synthetic antiferromagnets (SAFs) are potential candidates as the free layer
of the next-generation magnetic tunnel junctions (MTJs) for high speed and density …

Current‐induced spin‐orbit torques (SOTs) have emerged as a powerful tool to control
magnetic elements and non‐uniform magnetic textures such as domain walls and …

Current-induced field-free magnetization switching in single-layer films has been widely
investigated for the application of spin–orbit torque (SOT) drivers in low-power, high-density …

To overcome the interfacial nature of spin‐orbit torque (SOT) in bilayers, novel bulk SOT
(BSOT) is widely investigated to implement high‐density and low‐power spintronic devices …