Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

Abstract The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate
the complex processing of semiconductor devices. In this review, some of the main …

Core–shell nanowires (NWs) composed of silicon (Si) and germanium (Ge) are key
structures for realizing high mobility transistor channels, since the site-selective do** and …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

A recently discovered, enhanced Ge diffusion mechanism along the oxidizing interface of
Si/SiGe nanostructures has enabled the formation of single-crystal Si nanowires and …

The development of advanced semiconductor devices relies heavily on technology
computer-aided design. Front-end process simulators model the fabrication of devices …

The fabrication of increasingly powerful microelectronic processors, enabled by transistor
scaling, has been a main driver of technological progress in most fields since the 1950 s …

We investigate the morphological evolution of SiGe quantum dots deposited on Si (100)
during long-time annealing. At low strain, the dots' self-organization begins by an instability …