In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …

The success of silicon as a dominant semiconductor technology has been enabled by its
moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current …

Wide bandgap, high saturation velocity, and high thermal stability are some of the properties
of GaN, which make it an excellent material for high-power, high-frequency, and high …

We have investigated the self-heating effect on DC and RF performances of identically
fabricated AlGaN/GaN HEMTs on CVD-Diamond (GaN/Dia) and Si (GaN/Si) substrates. Self …

The industry standard advanced SPICE model (ASM)-GaN compact model has been
enhanced to model the GaN high electron mobility transistors (HEMTs) at extreme …

The temperature dependent characteristics of Ti/Al/Ni/Au Ohmic contact for AlGaN/GaN high
electron mobility transistors (HEMTs) on high-resistivity Si and sapphire substrates were …

We report on a temperature dependent threshold voltage analysis of the Al Ga N∕ Ga N
heterostructure field-effect transistors (HFETs) and Al 2 O 3∕ Al Ga N∕ Ga N metal-oxide …

The effects of gate-source (GS) and gate-drain (GD) region passivation on the drain current
(ID) collapse in Al Ga N∕ Ga N high-electron-mobility transistors (HEMTs) were studied …

A modified analytical model for the current–voltage (I–V) characteristics of AlGaN/GaN high-
electron-mobility transistors (HEMTs) is presented, considering the temperature …

ZnO-based junction field-effect transistors were fabricated by pulsed-laser deposition using
room-temperature-deposited amorphous p-type ZnCo 2 O 4 as heterojunction gate on top of …