An overview on analyses and suppression methods of trap** effects in AlGaN/GaN HEMTs
R Ye, X Cai, C Du, H Liu, Y Zhang, X Duan… - IEEE Access, 2021 - ieeexplore.ieee.org
Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high
power and high frequency applications. However, the existence of damages, defects and …
power and high frequency applications. However, the existence of damages, defects and …
Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements
This paper critically investigates the advantages and limitations of the current-transient
methods used for the study of the deep levels in GaN-based high-electron mobility …
methods used for the study of the deep levels in GaN-based high-electron mobility …
Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination
X Guo, Y Zhong, X Chen, Y Zhou, S Su, S Yan… - Applied Physics …, 2021 - pubs.aip.org
This Letter studies the reverse leakage and breakdown mechanisms of vertical GaN-on-Si
Schottky barrier diodes (SBDs) with and without argon-implanted termination (ArIT). The …
Schottky barrier diodes (SBDs) with and without argon-implanted termination (ArIT). The …
Trap** phenomena in AlGaN/GaN HEMTs: A study based on pulsed and transient measurements
Slow trap** phenomenon in AlGaN/GaN HEMTs has been extensively analyzed and
described in this paper. Thanks to a detailed investigation, based on a combined pulsed and …
described in this paper. Thanks to a detailed investigation, based on a combined pulsed and …
Trap** and reliability assessment in D-mode GaN-based MIS-HEMTs for power applications
This paper reports on an extensive analysis of the trap** processes and of the reliability of
experimental AlGaN/GaN MIS-HEMTs, grown on silicon substrate. The study is based on …
experimental AlGaN/GaN MIS-HEMTs, grown on silicon substrate. The study is based on …
The effect of interface polarity on the basal dislocations at the GaN/AlN interface
Y Yang, X Zhang, M Qin, J Liu, C Zhang… - Physical Chemistry …, 2025 - pubs.rsc.org
The unavoidable high-density dislocations in GaN usually hinder the normal operation of
GaN-based devices. The current theoretical research studies mainly focus on threading …
GaN-based devices. The current theoretical research studies mainly focus on threading …
Experimental characterization of charge trap** dynamics in 100-nm AlN/GaN/AlGaN-on-Si HEMTs by wideband transient measurements
This article deals with the characterization of charge trap** dynamics in a novel 100-nm
double-heterojunction AlN/GaN/AlGaN-on-Si radio frequency (RF) HEMT process. In order …
double-heterojunction AlN/GaN/AlGaN-on-Si radio frequency (RF) HEMT process. In order …
Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application
Current collapse due to the trap**/de-trap** of the carriers at the surface and in the bulk
of a 0.25 µm gate length AlGaN/GaN high electron mobility transistor is investigated using …
of a 0.25 µm gate length AlGaN/GaN high electron mobility transistor is investigated using …
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy
This paper presents a detailed investigation of trap** effect in AlGaN/GaN high-electron-
mobility transistors based on the pulsed current–voltage characterization, drain voltage …
mobility transistors based on the pulsed current–voltage characterization, drain voltage …
Temperature-Dependent Current Dispersion Study in β-Ga₂O₃ FETs Using Submicrosecond Pulsed I–V Characteristics
A comprehensive study of drain current dispersion effects in β-Ga 2 O 3 field-effect
transistors (FETs) has been done using dc and pulsed measurements. Both the virtual gate …
transistors (FETs) has been done using dc and pulsed measurements. Both the virtual gate …