On the changes in the dielectric, electric modulus, and ac electrical-conductivity in the Al/(C29H32O17)/p-Si (MPS) structures in wide range of frequency and voltage
In this study, C 29 H 32 O 17 was deposited onto p-type Si crystal to obtain Al/(C 29 H 32 O
17)/p-Si (MPS) structures. The complex-dielectric-constant (ε′ and ε ″), loss-tangent …
17)/p-Si (MPS) structures. The complex-dielectric-constant (ε′ and ε ″), loss-tangent …
The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures
Ş Altındal, H Uslu - Journal of Applied Physics, 2011 - pubs.aip.org
The frequency dependence of capacitance-voltage (CV) and conductance-voltage (G/ω-V)
characteristics of the Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky barrier diodes (SBDs) …
characteristics of the Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky barrier diodes (SBDs) …
The investigation of effects of (Fe2O4-PVP) organic-layer, surface states, and series resistance on the electrical characteristics and the sources of them
S Altındal Yerişkin - Journal of Materials Science: Materials in Electronics, 2019 - Springer
In this work, Au/n-Si (MS) structures with and without (Fe 2 O 4-doped PVP) interlayer were
prepared with the same conditions to see effects of organic layer on the electrical …
prepared with the same conditions to see effects of organic layer on the electrical …
The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer
The forward bias current-voltage (IV) characteristics of Au/n-Si Schottky barrier diodes
(SBDs) with Zn doped poly (vinyl alcohol)(PVA: Zn) interfacial layer have been investigated …
(SBDs) with Zn doped poly (vinyl alcohol)(PVA: Zn) interfacial layer have been investigated …
A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current–voltage (I–V) and capacitance–voltage (C–V) …
In this study, both the metal-semiconductor (MS) and metal-polymer-semiconductor
(MPS),(Al/C 20 H 12/p-Si), type Schottky barrier diodes (SBDs) were fabricated using spin …
(MPS),(Al/C 20 H 12/p-Si), type Schottky barrier diodes (SBDs) were fabricated using spin …
Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures
Zinc-ferrite nanostructures were fabricated using ultrasonic-assisted-method. FE-SEM, EDX
and XRD were utilized for the investigation of morphological and structural properties …
and XRD were utilized for the investigation of morphological and structural properties …
Effect of series resistance and interface states on the I–V, C–V and G/ω–V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room …
The forward and reverse bias current–voltage (I–V), capacitance–voltage (C–V) and
conductance–voltage (G/ω–V) characteristics of the Au/PVA (Bi-doped)/n-Si Schottky barrier …
conductance–voltage (G/ω–V) characteristics of the Au/PVA (Bi-doped)/n-Si Schottky barrier …
Electrical and impedance properties of MPS structure based on (Cu2O–CuO–PVA) interfacial layer
In this study, the electrical characteristics of the prepared Au/(Cu 2 O–CuO–PVA)/n-Si (MPS)
structures have been investigated in detail by using the frequency dependent C–V and G/ω …
structures have been investigated in detail by using the frequency dependent C–V and G/ω …
A systematic influence of Cu do** on structural and opto-electrical properties of fabricated Yb2O3 thin films for Al/Cu-Yb2O3/p-Si Schottky diode applications
In the present work, transition metal doped rare earth metal oxide (Cu-Yb 2 O 3) thin films
have been effectively synthesized on a large scale using low-cost jet nebulizer spray …
have been effectively synthesized on a large scale using low-cost jet nebulizer spray …
Electrical and photoelectrical properties of a vacuum-deposited MnClPc/n-Si heterojunction for photodiode application
Thin films of MnClPc/n-Si heterojunctions were performed by the thermal evaporating
technique. The C–V and GV characteristics of the diode under the effect of frequency were …
technique. The C–V and GV characteristics of the diode under the effect of frequency were …