Design and fabrication of GaN pn junction diodes with negative beveled-mesa termination
We report on homoepitaxial GaN pn junction diodes with a negative beveled-mesa
termination. The electric field distribution in a beveled-mesa was investigated using TCAD …
termination. The electric field distribution in a beveled-mesa was investigated using TCAD …
Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures
In this study, we experimentally determined the impact ionization coefficients of GaN using
homoepitaxially grown pn diodes with avalanche capability. The extracted hole impact …
homoepitaxially grown pn diodes with avalanche capability. The extracted hole impact …
Designing beveled edge termination in GaN vertical pin diode-bevel angle, do**, and passivation
A series of electric field profile simulations in gallium nitride (GaN) pin vertical diodes with
negative bevel termination is carried out to optimize the bevel design. The bevel angles are …
negative bevel termination is carried out to optimize the bevel design. The bevel angles are …
[HTML][HTML] On impact ionization and avalanche in gallium nitride
This paper is dedicated to discussing the physics and applications of avalanche on III-
Nitrides, primarily using Gallium Nitride as the example. Understanding the breakdown …
Nitrides, primarily using Gallium Nitride as the example. Understanding the breakdown …
Al0.1Ga0.9N pin Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 106
H You, H Wang, W Luo, Y Wang, X Liu… - IEEE Electron …, 2022 - ieeexplore.ieee.org
We report Al 0.1 Ga 0.9 N pin ultraviolet (UV) avalanche photodiodes (APDs) based on
sapphire substrates with a record-high gain over. The devices fabricated with various mesa …
sapphire substrates with a record-high gain over. The devices fabricated with various mesa …
A study on the impact of dislocation density on leakage current in vertical GaN-on-GaN pn diodes
The impact of dislocation density on off-state leakage current in avalanche-capable gallium
nitride (GaN)-on-GaN vertical pn diodes is experimentally demonstrated and studied. At first …
nitride (GaN)-on-GaN vertical pn diodes is experimentally demonstrated and studied. At first …
Al0.1Ga0.9N pin ultraviolet avalanche photodiodes with suppressed surface leakage current and uniform avalanche breakdown
H You, H Wang, W Luo, YW Wang, X Liu, Z Shao… - Optics …, 2023 - opg.optica.org
We report high-performance Al_0. 1Ga_0. 9N pin ultraviolet (UV) avalanche photodiodes
(APDs) based on sapphire substrates with stable breakdown voltages (V_BR) around 113.4 …
(APDs) based on sapphire substrates with stable breakdown voltages (V_BR) around 113.4 …
Exploring an approach toward the intrinsic limits of GaN electronics
S Jiang, Y Cai, P Feng, S Shen, X Zhao… - … applied materials & …, 2020 - ACS Publications
To fully exploit the advantages of GaN for electronic devices, a critical electric field that
approaches its theoretical value (3 MV/cm) is desirable but has not yet been achieved. It is …
approaches its theoretical value (3 MV/cm) is desirable but has not yet been achieved. It is …
Vertical GaN power devices
This chapter is designed to give the readers an overview on the progresses made in vertical
devices based on bulk gallium nitride (GaN). In GaN technology, vertical devices are now in …
devices based on bulk gallium nitride (GaN). In GaN technology, vertical devices are now in …
Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices
In this work, we evaluate the effect of the novel symmetric multicycle rapid thermal annealing
(SMRTA) process on both Mg ion implanted and non-implanted thick unintentionally doped …
(SMRTA) process on both Mg ion implanted and non-implanted thick unintentionally doped …