Composed of a metal oxide (MO x) material-based emitter layer, p–n heterojunction
photodetectors (HPDs) challenge their homojunction counterparts for use in new generation …

Integrating nanorods (NRs) into the structure of pn heterojunction-based devices proposes a
promising approach to overcome limited light absorption and charge transfer in …

In this work, a significant improvement of the classical silicon nanowire (SiNW)-based
photodetector was achieved through the realization of core–shell structures using newly …

Dual-functional sensors can replace two or more individual sensors in a platform so they
decrease the system area. However, these devices have a major limitation in that they …

This study reports the electrical properties of a fast-switching photodetector based on a
Hafnium Oxide (HfO2) thin film (TF) device with gold (Au) Schottky electrodes. It also …

This study proposes a novel photodetector (PD) that uses an amorphous InGaZnO
(IGZO)/silicon nanowires (SiNWs) heterojunction, in which the IGZO functions as an …

This work presents the investigation of the GLAD technique to fabricate Tantalum pentoxide
(Ta 2 O 5) Nanorods for the application of ultraviolet (UV) photodetector. X-ray diffraction …

Fabrication of heterojunctions of Si combined with TiO2 oxide-based semiconductors is an
alternative method to produce cost effective photodiodes at last decade. In this study, to …

The deposition of a Ta2O5 thin film (TF) onto n-Si substrates was carried out using a
conventional electron beam evaporation method. The amorphous structural nature of the …

A UV detector was fabricated using glancing angle deposition (GLAD)-synthesized TiO 2
nanowires (NWs) over spin-coated reduced graphene oxide (RGO) thin films (TFs) on a Si …