Field‐effect transistors, or FETs, are utilized in various electrical applications.
Nanoelectronic circuits based on FETs, on either hand, are inefficient in terms of energy …

Silicon nanowire (SiNW) structures are the essential foundations of the next generation
highly efficient and lowcost electronic devices because of their specific chemical, optical …

In this manuscript, a numerical model based on the electric field, threshold voltage, sub-
threshold current, and electrostatic potential in cylindrical coordinates using Poisson's …

In this paper, a simulation study of a novel structure of Double Gate Junctionless FET (DG-
JLFET) having Dielectric Pockets inside the channel region is being reported for the first …

Metal gate technology is one of the promising methods used to increase the drain current by
increasing the electrostatic controllability. Different metals have different work-function that …

In this paper, we lay out a simulation study of DC parameters for a hetero-dielectric
junctionless field transistor along with the best possible combination of high-k/low-k spacer …

Ga X In 1− X As/Ga Y In 1− Y Sb vertical heterojunctionless tunneling field effect transistor
(VHJL-TFET) has been suggested to optimize the digital benchmarking parameters. In the …

In this article, we present the application of Nanotube JLFET (DP-NT-JLFET) with embedded
Dielectric Pocket as a biosensor with high sensitivity and selectivity, employing the …