Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which
electrical currents can generate transverse spin currents and vice versa. Despite being …

Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged
as a powerful tool to generate complex magnetic textures, interconvert charge and spin …

Antiferromagnetic materials could represent the future of spintronic applications thanks to
the numerous interesting features they combine: they are robust against perturbation due to …

Antiferromagnetic materials are internally magnetic, but the direction of their ordered
microscopic moments alternates between individual atomic sites. The resulting zero net …

Modern computing technology is based on writing, storing and retrieving information
encoded as magnetic bits. Although the giant magnetoresistance effect has improved the …

Antiferromagnets are hard to control by external magnetic fields because of the alternating
directions of magnetic moments on individual atoms and the resulting zero net …

Recent technical advances in the atomic-scale synthesis of oxide heterostructures have
provided a fertile new ground for creating novel states at their interfaces. Different symmetry …

Magnetic devices are a leading contender for the implementation of memory and logic
technologies that are non-volatile, that can scale to high density and high speed, and that do …

Abstract In 1984, Bychkov and Rashba introduced a simple form of spin–orbit coupling to
explain the peculiarities of electron spin resonance in two-dimensional semiconductors …

The electrical manipulation of magnetism and magnetic properties has been achieved
across a number of different material systems. For example, applying an electric field to a …