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Electronics based on two-dimensional materials: Status and outlook
Since Moore's law in the traditional semiconductor industry is facing shocks, More Moore
and More than Moore are proposed as two paths to maintain the development of the …
and More than Moore are proposed as two paths to maintain the development of the …
Novel fabrication techniques for ultra-thin silicon based flexible electronics
Flexible electronics offer a multitude of advantages, such as flexibility, lightweight property,
portability, and high durability. These unique properties allow for seamless applications to …
portability, and high durability. These unique properties allow for seamless applications to …
Towards integrated tunable all-silicon free-electron light sources
Extracting light from silicon is a longstanding challenge in modern engineering and physics.
While silicon has underpinned the past 70 years of electronics advancement, a facile …
While silicon has underpinned the past 70 years of electronics advancement, a facile …
Epitaxy of single‐crystalline GaN film on CMOS‐compatible Si (100) substrate buffered by graphene
Y Feng, X Yang, Z Zhang, D Kang… - Advanced Functional …, 2019 - Wiley Online Library
Fabricating single‐crystalline gallium nitride (GaN)‐based devices on a Si (100) substrate,
which is compatible with the mainstream complementary metal‐oxide‐semiconductor …
which is compatible with the mainstream complementary metal‐oxide‐semiconductor …
Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems
TE Kazior - … Transactions of the Royal Society A …, 2014 - royalsocietypublishing.org
Advances in silicon technology continue to revolutionize micro-/nano-electronics. However,
Si cannot do everything, and devices/components based on other materials systems are …
Si cannot do everything, and devices/components based on other materials systems are …
AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si (111)
S Tripathy, VKX Lin, SB Dolmanan, JPY Tan… - Applied Physics …, 2012 - pubs.aip.org
This Letter reports on the epitaxial growth, characterization, and device characteristics of
crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si (111) substrate. The total …
crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si (111) substrate. The total …
Role of acid in precursor conversion during InP quantum dot synthesis
DC Gary, BM Cossairt - Chemistry of Materials, 2013 - ACS Publications
We have studied the speciation of P (SiMe3) 3 during the synthesis of colloidal InP quantum
dots in the presence of proton sources. Using 31P NMR spectroscopy, we show H3-n P …
dots in the presence of proton sources. Using 31P NMR spectroscopy, we show H3-n P …
Metamorphic epitaxy for multijunction solar cells
Multijunction solar cells have proven to be capable of extremely high efficiencies by
combining multiple semiconductor materials with bandgaps tuned to the solar spectrum …
combining multiple semiconductor materials with bandgaps tuned to the solar spectrum …
A review of GaN-based optoelectronic devices on silicon substrate
B Zhang, Y Liu - Chinese science bulletin, 2014 - Springer
Group III-nitride material system possesses some unique properties, such as large spectrum
coverage from infrared to deep ultraviolet, wide energy band gap, high electron saturation …
coverage from infrared to deep ultraviolet, wide energy band gap, high electron saturation …
Electronic structure of III-V zinc-blende semiconductors from first principles
For analyzing quantum transport in semiconductor devices, accurate electronic structures
are critical for quantitative predictions. Here we report theoretical analysis of electronic …
are critical for quantitative predictions. Here we report theoretical analysis of electronic …