Electronics based on two-dimensional materials: Status and outlook

S Zeng, Z Tang, C Liu, P Zhou - Nano Research, 2021 - Springer
Since Moore's law in the traditional semiconductor industry is facing shocks, More Moore
and More than Moore are proposed as two paths to maintain the development of the …

Novel fabrication techniques for ultra-thin silicon based flexible electronics

JY Lee, JE Ju, C Lee, SM Won… - International Journal of …, 2024 - iopscience.iop.org
Flexible electronics offer a multitude of advantages, such as flexibility, lightweight property,
portability, and high durability. These unique properties allow for seamless applications to …

Towards integrated tunable all-silicon free-electron light sources

C Roques-Carmes, SE Kooi, Y Yang… - Nature …, 2019 - nature.com
Extracting light from silicon is a longstanding challenge in modern engineering and physics.
While silicon has underpinned the past 70 years of electronics advancement, a facile …

Epitaxy of single‐crystalline GaN film on CMOS‐compatible Si (100) substrate buffered by graphene

Y Feng, X Yang, Z Zhang, D Kang… - Advanced Functional …, 2019 - Wiley Online Library
Fabricating single‐crystalline gallium nitride (GaN)‐based devices on a Si (100) substrate,
which is compatible with the mainstream complementary metal‐oxide‐semiconductor …

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

TE Kazior - … Transactions of the Royal Society A …, 2014 - royalsocietypublishing.org
Advances in silicon technology continue to revolutionize micro-/nano-electronics. However,
Si cannot do everything, and devices/components based on other materials systems are …

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si (111)

S Tripathy, VKX Lin, SB Dolmanan, JPY Tan… - Applied Physics …, 2012 - pubs.aip.org
This Letter reports on the epitaxial growth, characterization, and device characteristics of
crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si (111) substrate. The total …

Role of acid in precursor conversion during InP quantum dot synthesis

DC Gary, BM Cossairt - Chemistry of Materials, 2013 - ACS Publications
We have studied the speciation of P (SiMe3) 3 during the synthesis of colloidal InP quantum
dots in the presence of proton sources. Using 31P NMR spectroscopy, we show H3-n P …

Metamorphic epitaxy for multijunction solar cells

RM France, F Dimroth, TJ Grassman, RR King - MRS Bulletin, 2016 - cambridge.org
Multijunction solar cells have proven to be capable of extremely high efficiencies by
combining multiple semiconductor materials with bandgaps tuned to the solar spectrum …

A review of GaN-based optoelectronic devices on silicon substrate

B Zhang, Y Liu - Chinese science bulletin, 2014 - Springer
Group III-nitride material system possesses some unique properties, such as large spectrum
coverage from infrared to deep ultraviolet, wide energy band gap, high electron saturation …

Electronic structure of III-V zinc-blende semiconductors from first principles

Y Wang, H Yin, R Cao, F Zahid, Y Zhu, L Liu… - Physical Review B …, 2013 - APS
For analyzing quantum transport in semiconductor devices, accurate electronic structures
are critical for quantitative predictions. Here we report theoretical analysis of electronic …