Nanocomposites of poly (vinylidene fluoride)-Controllable hydroxylated/carboxylated graphene with enhanced dielectric performance for large energy density …

C Yang, SJ Hao, SL Dai, XY Zhang - Carbon, 2017 - Elsevier
In this research, hydroxylated and carboxylated graphene (GROH and GRCOOH) with
controllable functionalized level by means of diazonium addition was successfully prepared …

Low-Temperature Deposition of Inorganic–Organic HfO2–PMMA Hybrid Gate Dielectric Layers for High-Mobility ZnO Thin-Film Transistors

GSR Mullapudi, GA Velazquez-Nevarez… - ACS Applied …, 2019 - ACS Publications
Low-temperature solution-processed inorganic–organic hybrid gate dielectrics are
considered as emerging candidates for future low-cost flexible electronic devices, which are …

Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

Y Jeong, C Pearson, HG Kim, MY Park… - … applied materials & …, 2016 - ACS Publications
We report on the optimization of the plasma treatment conditions for a solution-processed
silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The …

OLED display and method of fabrication thereof

DR Dykaar - US Patent 10,312,310, 2019 - Google Patents
According to the present specification there is provided an active matrix OLED display and a
method of fabrication thereof, the method comprising: providing a backplane and an OLED …

ZnO–Plasma Polymer Fluorocarbon Thin Films for Stable Battery Anodes and High-Output Triboelectric Nanogenerators

A Song, JH Kim, H Yong, Y Rho, DS Song… - ACS Applied Nano …, 2022 - ACS Publications
In this study, ZnO–plasma polymer fluorocarbon (PPFC) nanocomposite thin films were
prepared by a mid-range frequency sputtering method using ZnO–polyfluoroethylene …

Solution-processed SiO 2 gate insulator formed at low temperature for zinc oxide thin-film transistors

Y Jeong, C Pearson, HG Kim, MY Park, H Kim, LM Do… - RSC Advances, 2015 - pubs.rsc.org
We report on the low-temperature formation (180° C) of a SiO2 dielectric layer from solution-
processed perhydropolysilazane. A bottom-gate zinc oxide thin-film transistor has …

Flexible organic field-effect transistors with high-reliability gate insulators prepared by a room-temperature, electrochemical-oxidation process

S Sun, L Lan, P **ao, Z Lin, H Xu, M Xu, J Peng - RSC Advances, 2015 - pubs.rsc.org
Flexible organic field-effect transistors (OFETs) with electrochemically oxidized gate
insulators (AlOx: Nd) covered by a thin layer of hydroxyl-free poly (perfluorobutenylvinylether …

Dielectric properties of polymer-graphene composites

S Nayak, B Sahoo - Polymer Nanocomposites Containing Graphene, 2022 - Elsevier
Polymer composites/nanocomposites have various applications. Graphene-based polymer
nanocomposites have been of great interest to researchers due to their good electrical and …

Nanofabrication process by reactive ion etching of polystyrene nanosphere on silicon surface

JA Yabagi, MI Kimpa, MN Muhammad… - Journal of Science …, 2017 - publisher.uthm.edu.my
Nanospheres made of organic polymer have been applied to generate various patterning
mask in fabricating functional nanostructures. The patterning and generation of …

Cross-linkable random copolymers as dielectrics for low-voltage organic field-effect transistors

ER Simas, ESH Kang, A Gassmann… - Journal of Materials …, 2015 - pubs.rsc.org
A large number of cross-linkable dielectrics with good dielectric properties have been
reported; however, all of them suffer from disadvantages like uncontrolled pre-crosslinking …