Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
Ultraviolet photodetectors: From photocathodes to low-dimensional solids
The paper presents the long-term evolution and recent development of ultraviolet
photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly …
photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly …
High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors
High-temperature operation of metal–semiconductor–metal (MSM) UV photodetectors
fabricated on pulsed laser deposited β-Ga 2 O 3 thin films has been investigated. These …
fabricated on pulsed laser deposited β-Ga 2 O 3 thin films has been investigated. These …
Demonstration of high-performance 4H-SiC MISIM ultraviolet photodetector with operation temperature of 550° C and high responsivity
F Du, Q Song, X Tang, Z Zhang, H Yuan… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this article, a 4H-SiC metal-insulator-semiconductor-insulator-metal (MISIM) ultraviolet
(UV) photodetector (PD) with a normal working temperature up to 550° C, has been …
(UV) photodetector (PD) with a normal working temperature up to 550° C, has been …
Visible-blind photodetector based on pin junction 4H-SiC vertical nanocone array
S Guo, X Zhao, Y He, Y Cai, M Yang… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this article, we report the first experimental results of a novel 4H-silicon carbide (SiC) pin
photodetector based on a vertical nanocone array (NCA). It is fabricated by electron beam …
photodetector based on a vertical nanocone array (NCA). It is fabricated by electron beam …
Large-area 4H-SiC ultraviolet avalanche photodiodes based on variable-temperature reflow technique
X Zhou, T Han, Y Lv, J Li, W Lu, Y Wang… - IEEE Electron …, 2018 - ieeexplore.ieee.org
In this letter, we report high-performance 4H-SiC separated absorption charge multiplication
ultraviolet (UV) avalanche photodiodes (APDs) with a large active area (800-μm diameter) …
ultraviolet (UV) avalanche photodiodes (APDs) with a large active area (800-μm diameter) …
An Efficient 4H-SiC photodiode for UV sensing applications
In this paper, we report experimental findings on a 4H-SiC-based pin photodiode. The
fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a …
fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a …
Bidirectional bias response ultraviolet phototransistors with 4H-SiC NPN multi-layer structure
C Sun, H Guo, L Yuan, H Yang, X Tang… - IEEE Photonics …, 2022 - ieeexplore.ieee.org
Silicon Carbide (SiC) Ultraviolet (UV) phototransistors with bidirectional bias response were
fabricated and analyzed in this letter. The results showed that the fabricated UV …
fabricated and analyzed in this letter. The results showed that the fabricated UV …
Highly enhanced inductive current sustaining capability and avalanche ruggedness in GaN pin diodes with shallow bevel termination
KW Nie, WZ Xu, FF Ren, D Zhou… - IEEE Electron …, 2020 - ieeexplore.ieee.org
In this work, small-angle beveled-mesa termination technique was developed in GaN pin
power diodes for high avalanche performances. With effective alleviation of electric field …
power diodes for high avalanche performances. With effective alleviation of electric field …
550° C 4H-SiC pin photodiode array with two-layer metallization
The pin ultraviolet (UV) photodiodes based on 4H-SiC have been fabricated and
characterized from room temperature (RT) to 550° C. Due to bandgap narrowing at higher …
characterized from room temperature (RT) to 550° C. Due to bandgap narrowing at higher …