Generation of Multiple Excitons in Ag2S Quantum Dots: Single High-Energy versus Multiple-Photon Excitation
We explored biexciton generation via carrier multiplication (or multiple-exciton generation)
by high-energy photons and by multiple-photon absorption in Ag2S quantum dots (QDs) …
by high-energy photons and by multiple-photon absorption in Ag2S quantum dots (QDs) …
Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness
CF Schuck, SK Roy, T Garrett, Q Yuan, Y Wang… - Scientific reports, 2019 - nature.com
Driven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0. 52Al0. 48As (111)
A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained …
A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained …
Optical and structural properties of InP quantum dots embedded in
Within this work we present optical and structural properties of InP quantum dots embedded
in (Al x Ga 1− x) 0.51 In 0.49 P barriers. Atomic force microscopy measurements show a …
in (Al x Ga 1− x) 0.51 In 0.49 P barriers. Atomic force microscopy measurements show a …
Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs cap** temperature
T Kaizu, T Matsumura, T Kita - Journal of Applied Physics, 2015 - pubs.aip.org
We investigated the effects of the GaAs cap** temperature on the morphological and
photoluminescence (PL) properties of InAs quantum dots (QDs) on GaAs (001). The …
photoluminescence (PL) properties of InAs quantum dots (QDs) on GaAs (001). The …
Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures
GG Tarasov, ZY Zhuchenko, MP Lisitsa, YI Mazur… - Semiconductors, 2006 - Springer
Self-assembled quantum dots (QDs) in double-layer InAs/GaAs structures are studied by
resonant photoluminescence and photoluminescence excitation spectroscopy. A weakly …
resonant photoluminescence and photoluminescence excitation spectroscopy. A weakly …
Change in topography of InAs submonolayer nanostructures at the 2D to 3D transition
A strong topographical evidence of the 2D to 3D transition in InAs/GaAs nanostructures
assembled by the submonolayer (SML) growth mode using molecular beam epitaxy (MBE) …
assembled by the submonolayer (SML) growth mode using molecular beam epitaxy (MBE) …
Random population of quantum dots in InAs–GaAs laser structures
I O'Driscoll, P Blood… - IEEE Journal of Quantum …, 2010 - ieeexplore.ieee.org
We have measured the spontaneous emission rates, absorption, and gain spectra of
quantum dots between 20 K and 350 K using the segmented contact method, exploiting self …
quantum dots between 20 K and 350 K using the segmented contact method, exploiting self …
Transient luminescence of dense InAs/GaAs quantum dot arrays
Carrier transfer between quantum dots (QDs) in very dense InAs/GaAs QD arrays is studied
by means of steady state and time-resolved photoluminescence spanning a wide range of …
by means of steady state and time-resolved photoluminescence spanning a wide range of …
Photoluminescence study of carrier transfer among vertically aligned double-stacked InAs/GaAs quantum dot layers
Photoluminescence (PL) properties of self-organized quantum dots (QDs) in a vertically
aligned double-layer InAs/GaAs QD structure are studied as a function of temperature from …
aligned double-layer InAs/GaAs QD structure are studied as a function of temperature from …
Nucleation of Ga droplets self-assembly on GaAs (111) A substrates
We investigated the nucleation of Ga droplets on singular GaAs (111) A substrates in the
view of their use as the seeds for the self-assembled droplet epitaxial quantum dots. A small …
view of their use as the seeds for the self-assembled droplet epitaxial quantum dots. A small …