Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Intercalation as a versatile tool for fabrication, property tuning, and phase transitions in 2D materials
Recent advances in two-dimensional (2D) materials have led to the renewed interest in
intercalation as a powerful fabrication and processing tool. Intercalation is an effective …
intercalation as a powerful fabrication and processing tool. Intercalation is an effective …
Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …
Applications of phosphorene and black phosphorus in energy conversion and storage devices
The successful isolation of phosphorene (atomic layer thick black phosphorus) in 2014 has
currently aroused the interest of 2D material researchers. In this review, first, the …
currently aroused the interest of 2D material researchers. In this review, first, the …
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …
Van der Waals heterostructures for optoelectronics: Progress and prospects
Over the past decade, van der Waals (vdW) heterostructures has offered considerable
freedom to integrate various two dimensional (2D) layered materials and proved themselves …
freedom to integrate various two dimensional (2D) layered materials and proved themselves …
Sub-5 nm Monolayer MoS2 Transistors toward Low-Power Devices
Inspired by the recent achievements of the two-dimensional (2D) sub-5 nm MoS2 field effect
transistors (FETs), we use the ab initio quantum-transport methods to simulate the transport …
transistors (FETs), we use the ab initio quantum-transport methods to simulate the transport …
Performance limit of monolayer MoSi 2 N 4 transistors
Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
Can carbon nanotube transistors be scaled down to the sub-5 nm gate length?
Single-walled carbon nanotubes (CNTs) have been considered as a promising
semiconductor to construct transistors and integrated circuits in the future owing to their …
semiconductor to construct transistors and integrated circuits in the future owing to their …
High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors
ZQ Fan, ZH Zhang, SY Yang - Nanoscale, 2020 - pubs.rsc.org
Using ab initio quantum-transport simulations, we studied the intrinsic transfer
characteristics and benchmarks of the ballistic performance of 5.1 nm double-gated Schottky …
characteristics and benchmarks of the ballistic performance of 5.1 nm double-gated Schottky …