[HTML][HTML] A review on energy harvesting technologies: Comparison between non-conventional and conceptual approaches

K Bhatt, S Kumar, S Kumar, S Sharma, V Singh - Energy Reports, 2024 - Elsevier
Due to technological advancement day by day, the world's demand for energy has been
increasing, especially in emerging economies. This is further complicated by the fact that the …

Oxides for Rectenna technology

IZ Mitrovic, S Almalki, SB Tekin, N Sedghi, PR Chalker… - Materials, 2021 - mdpi.com
The quest to harvest untapped renewable infrared energy sources has led to significant
research effort in design, fabrication and optimization of a self-biased rectenna that can …

Nanoscale film thickness gradients printed in open air by spatially varying chemical vapor deposition

AH Alshehri, JY Loke, VH Nguyen… - Advanced Functional …, 2021 - Wiley Online Library
Nanoscale films are integral to all modern electronics. To optimize device performance,
researchers vary the film thickness by making batches of devices, which is time‐consuming …

Built-In Packaging for Two-Terminal Devices

A Gulsaran, B Bastug Azer, D Ozyigit, R Saritas… - Micromachines, 2023 - mdpi.com
Conventional packaging and interconnection methods for two-terminal devices, eg, diodes
often involve expensive and bulky equipment, introduce parasitic effects and have reliability …

Metal‐Insulator‐Insulator‐Metal Diodes with Responsivities Greater Than 30 AW−1 Based on Nitrogen‐Doped TiOx and AlOx Insulator Layers

AH Alshehri, A Shahin, K Mistry… - Advanced Electronic …, 2021 - Wiley Online Library
Metal‐insulator‐insulator‐metal diodes based on nitrogen‐doped titanium dioxide (NTiOx)
and aluminum oxide (NAlOx) are fabricated and characterized for the first time. Pt/TiOx …

Electrical characteristics of Al2O3/p-Si heterojunction diode and effects of radiation on the electrical properties of this diode

AR Deniz, Z Caldıran, LB Taşyürek - Journal of Materials Science …, 2022 - Springer
The temperature dependence of the electrical parameters of the Au/α-Al2O3/p-Si/Al
heterojunction diode and the variation of these parameters with radiation were investigated …

Ultrahigh rectification ratio in an asymmetric metal/semiconductor/metal nanoscale tunneling junction: Implications for high-frequency rectifiers

X Liu, G Feng, X Feng, J Zhang, S Hao… - ACS Applied Nano …, 2023 - ACS Publications
The ultrafast quantum-based electron-transport mechanism with a typical tunneling time of
femtoseconds is appealing to fabricate high-frequency rectifier diode devices for …

Combinatorial Optimization of Metal‐Insulator‐Insulator‐Metal (MIIM) Diodes With Thickness‐Gradient Films via Spatial Atomic Layer Deposition

AH Alshehri, H Asgarimoghaddam… - Advanced Electronic …, 2024 - Wiley Online Library
Abstract Metal‐insulator‐insulator‐metal (MIIM) diodes with thickness‐gradient films for the
insulator layers are fabricated for the first time. Spatially varying atmospheric‐pressure …

A natural dye-based Schottky diode with observed quantum tunnelling and determined trap density, mobility, and excellent sensitivity and nonlinearity

AK Das, NB Manik, DK Mandal, S Rkashit… - Bulletin of Materials …, 2024 - Springer
Trap density (N t), density of carriers (no) and mobility are extracted in Al/beetroot/Cu
Schottky diode using the Poisson's equation. The trap density and carrier concentration …

[Retracted] Resonant Excitation Analysis of the Absorption Enhancement of L‐Shaped Metasurfaces in Midinfrared Band

H Feng - Journal of Sensors, 2022 - Wiley Online Library
Surface plasmon waveguides have attracted a lot of attention in recent years due to their
ability to conduct light in the subwavelength scale. A large number of metallic structures …