[HTML][HTML] Ferromagnetic semiconductor GaMnAs
The newly-develo** spintronics technology requires materials that allow control of both
the charge and the spin degrees of freedom of the charge carriers. Ferromagnetic …
the charge and the spin degrees of freedom of the charge carriers. Ferromagnetic …
Mn-doped Ge and Si: a review of the experimental status
Diluted ferromagnetic semiconductors (FMS) are in the focus of intense research due to their
potential applications in spintronics and their striking new physical properties. So far Mn …
potential applications in spintronics and their striking new physical properties. So far Mn …
Curie temperature versus hole concentration in field-effect structures of
The Curie temperature TC is investigated as a function of the hole concentration p in thin
films of ferromagnetic semiconductor (Ga, Mn) As. The magnetic properties are probed by …
films of ferromagnetic semiconductor (Ga, Mn) As. The magnetic properties are probed by …
Enhancement of Curie temperature in Ga1− xMnxAs/Ga1− yAlyAs ferromagnetic heterostructures by Be modulation do**
T Wojtowicz, WL Lim, X Liu, M Dobrowolska… - Applied Physics …, 2003 - pubs.aip.org
The effect of modulation do** by Be on the ferromagnetic properties of Ga1xMnxAs is
investigated in Ga1xMnxAs/Ga1yAlyAs heterojunctions and quantum wells. Introducing Be …
investigated in Ga1xMnxAs/Ga1yAlyAs heterojunctions and quantum wells. Introducing Be …
Carrier-Mediated Antiferromagnetic Interlayer Exchange Coupling <?format ?>in Diluted Magnetic Semiconductor Multilayers
We report the antiferromagnetic (AFM) interlayer exchange coupling between Ga 0.97 Mn
0.03 As ferromagnetic semiconductor layers separated by Be-doped GaAs spacers …
0.03 As ferromagnetic semiconductor layers separated by Be-doped GaAs spacers …
Stable Multidomain Structures Formed in the Process of Magnetization Reversal<? format?> in GaMnAs Ferromagnetic Semiconductor Thin Films
The process of magnetization reversal in ferromagnetic Ga (1-x) Mn x As epilayers has been
systematically investigated using the planar Hall effect (PHE). Interestingly, we have …
systematically investigated using the planar Hall effect (PHE). Interestingly, we have …
Magnetic anisotropy of ferromagnetic films with graded composition
We have investigated magnetic anisotropy properties of ferromagnetic semiconductor Ga 1−
x Mn x As 1− y P y films grown by molecular beam epitaxy on GaAs substrates with constant …
x Mn x As 1− y P y films grown by molecular beam epitaxy on GaAs substrates with constant …
Enhancement of the magnetic properties in (Ga1− xMnx) N thin films due to Mn-delta do**
HC Jeon, TW Kang, TW Kim, J Kang… - Applied Physics …, 2005 - pubs.aip.org
The effects of Mn delta-do** on the magnetic properties of (Ga 1− x Mn x) N thin films
grown on GaN buffer layers by molecular-beam epitaxy were studied. The magnetization …
grown on GaN buffer layers by molecular-beam epitaxy were studied. The magnetization …
MBE growth of Mn-doped Zn–Sn–As compounds on (0 0 1) InP substrates
We report the molecular beam epitaxy (MBE) growth of lightly Mn-doped Zn–Sn–As-based
compounds on (001) InP substrates. Our XRD measurements showed peaks assignable to …
compounds on (001) InP substrates. Our XRD measurements showed peaks assignable to …
Growth of (Ga, Mn) As on GaAs (0 0 1) and (3 1 1) A in a high-mobility MBE system
M Reinwald, U Wurstbauer, M Döppe, W Kipferl… - Journal of crystal …, 2005 - Elsevier
We demonstrate the possibility to produce both GaAs/AlGaAs heterostructures with high
electron mobilities and (Ga, Mn) As by molecular beam epitaxy (MBE) in the same growth …
electron mobilities and (Ga, Mn) As by molecular beam epitaxy (MBE) in the same growth …