Exploration of the Stranski-Krastanow growth of strained semiconductor heterostructures
marked the major breakthrough for easy fabrication of defect-free quantum dots (QDs). For …

At present, metal–molecular tunnel junctions are recognized as important active elements in
molecular electronics. This gives a strong motivation to explore physical mechanisms …

We demonstrate the large potential of III–V compound semiconductors for a novel type of
Flash memory. The concept is based on self-organized III–V quantum dots (QDs). Here the …

A thermal activation energy of 710 meV for hole emission from In As∕ Ga As quantum dots
(QDs) across an Al 0.9 Ga 0.1 As barrier is determined by using time-resolved capacitance …

A write time of 6ns for quantum dot–based memory structures | Applied Physics Letters | AIP
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The present paper investigates the current status of the storage times in self‐organized QDs,
surveying a variety of heterostructures advantageous for strong electron and/or hole …

We demonstrate a strong influence of charged self-assembled quantum dots (QD) on the
conductance of a nearby two-dimensional electron gas (2DEG). A conductance …

At present, we observe a long-lasting process of miniaturization of electronic devices. The
ultimate limit for the miniaturization of electronic components is set by the atomic scale …

Self-assembled quantum dots are still one of the best model systems for artificial atoms in a
solid-state environment, where the electronic states can be accessed by electrical and …

The in-plane photoconductivity and photoluminescence are investigated in quantum dot-
chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from …