Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals
and applications of strain in semiconductors and semiconductor devices that is relevant for …

An attempt has been made to give a detailed review of strained silicon technology. Various
device models have been studied that consider the effect of strain on the devices, and …

Epitaxial growth of strained layers used for highspeed electronic devices can induce surface
roughness, which impacts gate dielectric properties. To precisely understand the effect of …

Strained Si and strained SiGe layers can increase the speed of MOS devices through
enhanced electron and hole mobilities compared with bulk Si. However, epitaxial growth of …

Strained Si/Ge channel devices with highly enhanced mobilities are formed on SiGe strain-
relaxed buffer layers, called SiGe virtual substrates, hence crystal qualities of the virtual …

Strained silicon (Si) and silicon-germanium (SiGe) devices have long been recognised for
their enhanced mobility and higher on-state current compared with bulk-Si transistors …