Wafer-Scale Atomic Layer-Deposited TeOx/Te Heterostructure P-Type Thin-Film Transistors
There is an increasing demand for p-type semiconductors with scalable growth, excellent
device performance, and back-end-of-line (BEOL) compatibility. Recently, tellurium (Te) has …
device performance, and back-end-of-line (BEOL) compatibility. Recently, tellurium (Te) has …
Improving the Thermal Stability of Indium Oxide n-Type Field-Effect Transistors by Enhancing Crystallinity through Ultrahigh-Temperature Rapid Thermal Annealing
CS Huang, CC Shih, WW Tsai, WY Woon… - … Applied Materials & …, 2025 - ACS Publications
Ultrathin indium oxide films show great potential as channel materials of complementary
metal oxide semiconductor back-end-of-line transistors due to their high carrier mobility …
metal oxide semiconductor back-end-of-line transistors due to their high carrier mobility …
Highly Robust All-Oxide Transistors Toward Vertical Logic and Memory
In this work, we report atomic-layer-deposited (ALD) based all-oxide transistors toward
vertically stacked high-density logic and memory for 3-D integration. This structure utilizes …
vertically stacked high-density logic and memory for 3-D integration. This structure utilizes …
Ultralow Voltage Operation of p-and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium
The ongoing demand for more energy-efficient, high-performance electronics is driving the
exploration of innovative materials and device architectures, where interfaces play a crucial …
exploration of innovative materials and device architectures, where interfaces play a crucial …
High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling
X Huang, K Hikake, SH Kim, K Sakai… - … on Electron Devices, 2024 - ieeexplore.ieee.org
We have investigated the scaling potential of nanosheet oxide semiconductor FETs (NS OS
FETs) for monolithic 3-D (M3D) integration in terms of atomic layer deposition (ALD) material …
FETs) for monolithic 3-D (M3D) integration in terms of atomic layer deposition (ALD) material …
Devices, Materials, Process Technologies, and Microelectronic Ecosystem Beyond the Exit of the Device Miniaturization Tunnel
Many innovations across the system stack–from algorithms and architectures to circuits,
devices, fabrication processes, and materials–will provide large synergistic benefits at the …
devices, fabrication processes, and materials–will provide large synergistic benefits at the …