Laser based display method and system
JW Raring, P Rudy - US Patent 8,427,590, 2013 - Google Patents
The present invention is directed to display technologies. More specifically, various
embodiments of the present invention provide projection display systems where one or more …
embodiments of the present invention provide projection display systems where one or more …
Solid-state optical device having enhanced indium content in active regions
JW Raring, DF Feezell, S Nakamura - US Patent 8,847,249, 2014 - Google Patents
US8847249B2 - Solid-state optical device having enhanced indium content in active regions -
Google Patents US8847249B2 - Solid-state optical device having enhanced indium content in …
Google Patents US8847249B2 - Solid-state optical device having enhanced indium content in …
Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
JW Raring, N Pfister, M Schmidt, C Poblenz - US Patent 8,355,418, 2013 - Google Patents
7.923, 741 B1 4, 2011 Zhai et all-4- 2009, 0081857 A1 3f2009 Hanser et al. 7,939,354 B2
5/2011 Kyono et al. 7968.864 B2 6, 2011 Akita et al. 2009/0081867 A1 3, 2009 Taguchi et …
5/2011 Kyono et al. 7968.864 B2 6, 2011 Akita et al. 2009/0081867 A1 3, 2009 Taguchi et …
Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates
JW Raring, N Pfister, M Schmidt, C Poblenz - US Patent 8,351,478, 2013 - Google Patents
7,009,199 B2 3/2006 Hall 2008/00879 19 A1 4/2008 Tysoe et al. 2.933, 858 B2 4.2996 Chai
et al. 2008/00928.12 A1 4/2008 McDiarmid et al. 7053, 413 B2 5 2006 PEvelyn et al …
et al. 2008/00928.12 A1 4/2008 McDiarmid et al. 7053, 413 B2 5 2006 PEvelyn et al …
Optical device structure using GaN substrates for laser applications
An optical device includes a gallium nitride substrate member having an m-plane nonpolar
crystalline surface region characterized by an orientation of about− 2 degrees to about 2 …
crystalline surface region characterized by an orientation of about− 2 degrees to about 2 …
Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
JW Raring, M Schmidt, C Poblenz - US Patent 9,543,738, 2017 - Google Patents
US9543738B2 - Low voltage laser diodes on {20-21} gallium and nitrogen containing
substrates - Google Patents US9543738B2 - Low voltage laser diodes on {20-21} gallium and …
substrates - Google Patents US9543738B2 - Low voltage laser diodes on {20-21} gallium and …
Optical device structure using miscut GaN substrates for laser applications
JW Raring, DF Feezell, NJ Pfister - US Patent 8,422,525, 2013 - Google Patents
An optical device capable of emitting light having a wavelength ranging from about 490 to
about 580 nanometers has a gallium nitride substrate with a semipolar crystalline surface …
about 580 nanometers has a gallium nitride substrate with a semipolar crystalline surface …
Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers
Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting
an axis of light propagation in relation to an optical polarization direction or crystallographic …
an axis of light propagation in relation to an optical polarization direction or crystallographic …
Light emitting device
K Okamoto, H Ohta - US Patent App. 12/076,762, 2008 - Google Patents
SUMMARY OF THE INVENTION 0007 An object of the invention is to provide a light emit
ting device that can achieve emission of light having a long wavelength using a group III …
ting device that can achieve emission of light having a long wavelength using a group III …
Laser package having multiple emitters with color wheel
JW Raring, P Rudy, C Bai - US Patent 9,287,684, 2016 - Google Patents
Method and devices for emitting electromagnetic radiation at high power using nonpolar or
semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and …
semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and …