GaN high electron mobility transistors for sub-millimeter wave applications
This paper reviews different technologies recently developed to push the performance of
GaN-based high electron mobility transistors (HEMTs) into sub-mm wave frequencies. To …
GaN-based high electron mobility transistors (HEMTs) into sub-mm wave frequencies. To …
RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band
We report the RF power results of Sc (Al, Ga) N/GaN high electron mobility transistors
(HEMTs). We show dc, small-signal RF and load-pull performance at 30 GHz with two …
(HEMTs). We show dc, small-signal RF and load-pull performance at 30 GHz with two …
An over 20-W/mm S-band InAlGaN/GaN HEMT with SiC/diamond-bonded heat spreader
T Ohki, A Yamada, Y Minoura… - IEEE Electron …, 2018 - ieeexplore.ieee.org
This letter reports on an InAlGaN/GaN high-electron-mobility transistor (HEMT) employing a
SiC/diamond-bonded heat spreader with a record high output power density of 22.3 W/mm …
SiC/diamond-bonded heat spreader with a record high output power density of 22.3 W/mm …
Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance
In this work, we present multi-channel tri-gate AlGaN/GaN metal-oxide-semiconductor high-
electron-mobility transistors (MOSHEMTs) for high-voltage applications. A heterostructure …
electron-mobility transistors (MOSHEMTs) for high-voltage applications. A heterostructure …
Impact of channel thickness on the large-signal performance in InAlGaN/AlN/GaN HEMTs with an AlGaN back barrier
The impact of varying the GaN channel layer thickness (t ch) in InAlGaN/AlN/GaN HEMTs
with C-doped AlGaN back barriers is investigated. t ch was 50, 100, and 150 nm, and the …
with C-doped AlGaN back barriers is investigated. t ch was 50, 100, and 150 nm, and the …
220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs
Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier
In_0.13Al_0.83Ga_0.04\breakN/AlN/GaN heterostructure on SiC substrate were fabricated …
In_0.13Al_0.83Ga_0.04\breakN/AlN/GaN heterostructure on SiC substrate were fabricated …
Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices
In this paper, we present a two-dimensional electron gas (2DEG) charge-control drain
current and small-signal model for sheet carrier density in the channel is developed for …
current and small-signal model for sheet carrier density in the channel is developed for …
Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT
F Lecourt, A Agboton, N Ketteniss… - IEEE electron device …, 2013 - ieeexplore.ieee.org
Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In
0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and …
0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and …
InAlGaN/GaN HEMTs at cryogenic temperatures
E Dogmus, R Kabouche, S Lepilliet, A Linge… - Electronics, 2016 - mdpi.com
We report on the electron transport properties of two-dimensional electron gas confined in a
quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the …
quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the …
Impact of Passivation Thickness in Highly Scaled GaN HEMTs
This letter studies the influence of the passivation thickness on the device characteristics of
InAlGaN/GaN high-electron-mobility transistors with a gate length between sub-30 and 70 …
InAlGaN/GaN high-electron-mobility transistors with a gate length between sub-30 and 70 …