Abstract (Ga, In) N-based light emitting devices are very efficient in producing blue light and
to a lesser extent green. Extending their spectral range to longer wavelengths while …

; 124, 219906 (2006)]} XC functional. The band gap of InGaN alloys as a function of In
content is calculated and a strong bowing at low In content is found, described by bowing …

This paper focuses on the determination of the bandgap energy bowing parameter of
strained and relaxed InxGa_1− xN layers. Samples are grown by metal organic vapor phase …

The lack of internal polarization fields in cubic group-III nitrides makes them promising
arsenic-free contenders for next-generation high-performance electronic and optoelectronic …

Semiconductor alloy materials are highly versatile due to their adjustable properties;
however, exploring their structural space is a challenging task that affects the control of their …

The electronic band structures of In x Ga 1− x N, In x Al 1− x N, and In x Ga y Al 1− x− y N
alloys are calculated by ab initio methods using a supercell geometry, and the effects of …

We have realized for the first time deep-red emission from InGaN-based light-emitting
diodes on c-plane sapphire substrates grown by metalorganic vapor-phase epitaxy. The …

The optical properties of thick InGaN epilayers, with compositions spanning the entire
ternary range, are studied in detail. High structural quality, single phase InxGa1-xN (0001) …

III-Nitride bandgap and refractive index data are of direct relevance for the design of (In, Ga,
Al) N-based photonic and electronic devices. The bandgaps and bandgap bowing …

Discussion of band gap behavior based on first principles calculations of electronic band
structures for various short period nitride superlattices is presented. Binary superlattices, as …