We report the synthesis of AlN hexagonal thin films by pulsed laser ablation, using Al target
in nitrogen ambient over natively-oxidized Si (111) at 600° C. Composition and chemical …

We report a method of creating solderable, mechanically robust, electrical contacts to
interface (soft) silicone-based strain sensors with conventional (hard) solid-state electronics …

We present a comprehensive investigation of temperature dependence of breakdown
voltage, DC current gain (β), and Early voltage (VA) for complementary SiGe-npn and SiGe …

New mobility improvement solutions are proposed for next generation SiC trench MOSFET
with higher aspect ratio trenches. A combination of channel counter-implant and pocket …

Back-end-of-line (BEOL) reliability, comprising barrier, dielectric and current-carrying metal
reliability, is a major challenge for future IC generations as the reliability margin of the …

The effects of oxidants in acidic and alkaline slurries on the chemical mechanical polishing
(CMP) process of gallium nitride were studied. In order to better understand the …

TSV and micro-Solder bump are key interconnects for 2.5 D and 3D Integrated circuit (IC)
chips, and being part of interconnects for IC, their Electromigration reliability must be …

We review our current understanding of the degradation mechanisms in scaled
interconnects. Concerns on the applicability of today's reliability evaluation methods are …

We report our investigations on HVPE grown GaN with thickness of 20 μm on MOVPE
GaN/Sapphire templates. The important characteristics for the proposed electric …

The invention relates to an antireflective structure based on porous silicon multilayers
stacked in a one-dimensional manner. This layer can reflect less than 4% of incident light at …