Silicon photonics for the visible and near-infrared spectrum
Emerging applications in quantum information, microscopy, biosensing, depth sensing, and
augmented reality demand miniaturized components in the visible (VIS) and near-infrared …
augmented reality demand miniaturized components in the visible (VIS) and near-infrared …
Efficient photon-pair generation in layer-poled lithium niobate nanophotonic waveguides
Integrated photon-pair sources are crucial for scalable photonic quantum systems. Thin-film
lithium niobate is a promising platform for on-chip photon-pair generation through …
lithium niobate is a promising platform for on-chip photon-pair generation through …
Plasmonic ferroelectric modulator monolithically integrated on SiN for 216 GBd data transmission
A high-speed plasmonic barium titanate (BTO, BaTiO_3) Mach-Zehnder modulator is
presented. We combine nanoscale plasmonics with BTO as solid-state active material and …
presented. We combine nanoscale plasmonics with BTO as solid-state active material and …
High-speed silicon photonic electro-optic Kerr modulation
Silicon-based electro-optic modulators contribute to easing the integration of high-speed
and low-power consumption circuits for classical optical communications and data …
and low-power consumption circuits for classical optical communications and data …
High‐Speed Waveguide‐Integrated InSe Photodetector on SiN Photonics for Near‐Infrared Applications
On‐chip integration of two‐dimensional (2D) materials holds immense potential for novel
optoelectronic devices across diverse photonic platforms. In particular, indium selenide …
optoelectronic devices across diverse photonic platforms. In particular, indium selenide …
Engineered second-order nonlinearity in silicon nitride
The lack of a bulk second-order nonlinearity (χ^(2)) in silicon nitride (Si_3N_4) keeps this
low-loss, CMOS-compatible platform from key active functions such as Pockels electro-optic …
low-loss, CMOS-compatible platform from key active functions such as Pockels electro-optic …
[HTML][HTML] Silicon nitride electric-field poled microresonator modulator
Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as
low propagation loss and compatibility with complementary metal-oxide-semiconductor …
low propagation loss and compatibility with complementary metal-oxide-semiconductor …
A new CsPbI2Br/CuZnSnSSe/Si tandem solar cell with higher than 32% efficiency
Abstract To avoid Shockley-Queisser limit in single pn junctions, tandem solar cells were
proposed. A new tandem cell is simulated here using the 1-dimensional SCAPS. The new …
proposed. A new tandem cell is simulated here using the 1-dimensional SCAPS. The new …
Electric-field-induced quasi-phase-matched three-wave mixing in silicon-based superlattice-on-insulator integrated circuits
We present a theoretical investigation, based on the tight-binding Hamiltonian, of efficient
electric-field-induced three-waves mixing (EFIM) in an undoped lattice-matched short-period …
electric-field-induced three-waves mixing (EFIM) in an undoped lattice-matched short-period …
Integrated backward second-harmonic generation through optically induced quasi-phase-matching
Quasi-phase-matching for efficient backward second-harmonic generation requires sub-μ m
poling periods, a nontrivial fabrication feat. For the first time, we report integrated first-order …
poling periods, a nontrivial fabrication feat. For the first time, we report integrated first-order …