Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Defect engineering in SiC technology for high-voltage power devices
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
[HTML][HTML] Review of silicon carbide processing for power MOSFET
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …
higher thermal conductivity, higher operating frequency, higher operating temperature, and …
Material science and device physics in SiC technology for high-voltage power devices
Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
High-voltage SiC power devices for improved energy efficiency
Silicon carbide (SiC) power devices significantly outperform the well-established silicon (Si)
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …
[كتاب][B] Gallium nitride and silicon carbide power devices
BJ Baliga - 2016 - books.google.com
During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …
of gallium nitride and silicon carbide device structures, resulting in experimental …
Current status and perspectives of ultrahigh-voltage SiC power devices
Recent progress in the SiC material and ultrahigh-voltage devices is reviewed. Regarding
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …
Wide bandgap semiconductor power devices for energy efficient systems
We review the vertical and lateral SiC and GaN power transistor types and structures
explored and commercialized for advanced energy efficient systems. We have quantitatively …
explored and commercialized for advanced energy efficient systems. We have quantitatively …
Assessment of 10 kV, 100 A Silicon Carbide mosfet Power Modules
This paper presents a thorough characterization of 10 kV SiC MOSFET power modules,
equipped with third-generation mosfet chips and without external free-wheeling diodes …
equipped with third-generation mosfet chips and without external free-wheeling diodes …
Impact ionization coefficients in 4H-SiC toward ultrahigh-voltage power devices
A temperature dependence of impact ionization coefficients in 4H-SiC was studied in a wide
range of electric field toward the accurate designing of ultrahigh-voltage devices. The …
range of electric field toward the accurate designing of ultrahigh-voltage devices. The …
Understanding and reduction of degradation phenomena in SiC power devices
Impacts of extended defects on performance and reliability of SiC power devices are
reviewed. Threading dislocations in the state-of-the-art SiC wafers do not work as the major …
reviewed. Threading dislocations in the state-of-the-art SiC wafers do not work as the major …