Abstract Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor
material that has gained significant attention in the field of high voltage and high frequency …

Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …

Previous research has shown that the hybridization of N 2p and O 2p orbitals effectively
suppresses the electrical activity of oxygen vacancies in oxide semiconductors. However …

High-performance-Ga2O3 U-shaped trench-gate metal-oxide-semiconductor field-effect
transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to …

Beta-gallium oxide (β-Ga2O3) is a material with a history of research and development
spanning about 70 years; however, it has attracted little attention as a semiconductor for a …

Abstract ε-Ga2O3 (002) thin films were successfully grown on Si (100) substrate by
metalorganic chemical vapor deposition (MOCVD). The crystal structure, chemical …

In this work, we demonstrated the enhancement mode (E-mode) β-Ga 2 O 3 metal–oxide–
semiconductor field-effect transistor (MOSFET) by introducing a hybrid floating gate (HFG) …

Mist CVD was applied to grow the β-Ga 2 O 3 channel layer of a MESFET on a semi-
insulating β-Ga 2 O 3 (010) substrate. The mobility and carrier concentration of the channel …

Power electronics are becoming increasingly more important, as electrical energy
constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly …

Ultra wide bandgap semiconductor beta-gallium oxide (-Ga2O3) has the potential in
fabricating the next generation of power devices applied at high temperature and high …