Two-dimensional reconfigurable field-effect transistors (FETs) are promising candidates for
next-generation computing hardware. However, exploring the cascade design of FETs for …

Emerging 2D nonvolatile Schottky‐barrier‐field‐effect transistors (NSBFETs) are envisaged
to build a promising reconfigurable in‐memory architecture to mimic the brain. Herein, a …

A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed,
in which the negative transconductance (NTC) characteristics can be controlled …

Reconfigurable field‐effect transistors, capable of being dynamically programmed during
run‐time, overcome the static nature of conventional complementary metal‐oxide …

Metal‐semiconductor heterostructures providing geometrically reproducible and abrupt
Schottky nanojunctions are highly anticipated for the realization of emerging electronic …

The emergence of reconfigurable field effect transistors has introduced a more efficient
method for realizing reconfigurable circuits, significantly lowering hardware overhead and …

Reconfigurable field‐effect transistors (RFETs) are a cutting‐edge research area that can
significantly impact future advancements in electronics and computing. While various RFETs …

Three‐gated reconfigurable field‐effect transistors are innovative nanoelectronic devices
that are rapidly and increasingly attracting substantial interest in several fields of application …

We present the hardware implementation of a reconfigurable universal logic gate, that we
call RGATE, able to deliver up to eight different logic functionalities and based on a …

This work demonstrates the novel concept of a mixed-dimensional reconfigurable field effect
transistor (RFET) by combining a one-dimensional (1D) channel material such as a silicon …