Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

X Zou, J Yang, Q Qiao, X Zou, J Chen, Y Shi, K Ren - Micromachines, 2023 - mdpi.com
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered
promising candidates for power devices due to their superior advantages of high current …

Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT

F Wang, C Gao, G Ding, C Yu, Z Wang, X Wang… - Science China …, 2025 - Springer
In this paper, we design and fabricate a Schottky-metal-insulator-semiconductor (MIS)
cascode anode GaN lateral field-effect diode (CA-LFED) to achieve ultralow reverse …

[HTML][HTML] Editorial for the Special Issue on the Latest Advancements in Semiconductor Materials, Devices and Systems

X Chen, F Wang, Z Wang, Z Wang, JK Huang - Micromachines, 2024 - mdpi.com
The field of semiconductor research is experiencing a paradigm shift as the boundaries of
Moore's Law are being approached [1]. While the exploration of next-generation …

Schottky-MIS Cascode Drain Reverse-Blocking p-GaN Gate Transistor with Significantly Reduced Forward Drop and Ultralow Leakage Current

F Wang, C Gao, G Ding, C Yu, X Wang… - IEEE Electron …, 2024 - ieeexplore.ieee.org
In this article, we experimentally propose a reverse-blocking (RB) p-GaN gate transistor with
the Schottky-MIS cascode drain (CDT) for the significantly reduced forward voltage drop (VF) …

Optimizing Forward Drop and Reverse Leakage Trade‐Off in AlGaN/GaN Lateral Diode with Schottky‐Metal‐Insulator‐Semiconductor Cascode Anode

F Wang, C Gao, G Ding, C Yu, Z Wang… - … status solidi (a), 2024 - Wiley Online Library
Herein, AlGaN/GaN lateral diode with the Schottky‐Metal‐Insulator‐Semiconductor (MIS)
cascode anode (CALD) to optimize forward voltage drop (VF) and reverse leakage current …