A broadband linear ultra-compact mm-wave power amplifier with distributed-balun output network: Analysis and design

F Wang, H Wang - IEEE Journal of Solid-State Circuits, 2021 - ieeexplore.ieee.org
This article presents a broadband power amplifier (PA) with a distributed-balun output
network that provides the PA optimum load impedance over a wide bandwidth. The …

Doubly-tuned transformer networks: A tutorial

A Bevilacqua, A Mazzanti - … on Circuits and Systems II: Express …, 2020 - ieeexplore.ieee.org
This tutorial illustrates the main features of the doubly-tuned transformer networks, focusing
on the various regimes of operation, the behavior around resonance, and the related …

A broadband 22–31-GHz bidirectional image-reject up/down converter module in 28-nm CMOS for 5G communications

F Quadrelli, D Manente, D Seebacher… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article presents a-band bidirectional transceiver front end and its integration in an
image-reject up/down converter module in 28-nm bulk CMOS. In the radio frequency (RF) …

A high-power broadband multi-primary DAT-based Doherty power amplifier for mm-wave 5G applications

F Wang, H Wang - IEEE Journal of Solid-State Circuits, 2021 - ieeexplore.ieee.org
Silicon-based millimeter-wave (mm-Wave) power amplifiers (PAs) with high power and high
peak/back-off efficiency are highly desired to efficiently amplify multi-Gb/s 5G NR signals …

A 265- W Fractional- Digital PLL With Seamless Automatic Switching Sub-Sampling/Sampling Feedback Path and Duty-Cycled Frequency-Locked Loop in 65 …

H Liu, Z Sun, H Huang, W Deng… - IEEE Journal of Solid …, 2019 - ieeexplore.ieee.org
This article proposes a fractional-N digital phase-locked loop (DPLL) that achieves a 265-
μW ultra-lowpower operation. The proposed switching feedback can seamlessly change the …

A 28-GHz Stacked Power Amplifier with 20.7-dBm Output P1dB in 28-nm Bulk CMOS

D Manente, F Padovan, D Seebacher… - IEEE Solid-State …, 2020 - ieeexplore.ieee.org
A fully integrated power amplifier (PA) for 5G communication systems is realized in a 28-nm
bulk CMOS technology. Power combining and stacking techniques are used to achieve a …

Fundamentals of integrated transformers: From principles to applications

A Bevilacqua - IEEE Solid-State Circuits Magazine, 2020 - ieeexplore.ieee.org
Magnetic transformers are conventionally used for distributing and converting electrical
energy and managing high electrical powers. They are typically large and bulky, such that …

A Ku-Band CMOS Power Amplifier With Series-Shunt LC Notch Filter for Satellite Communications

J Zhong, D Zhao, X You - … on Circuits and Systems I: Regular …, 2021 - ieeexplore.ieee.org
This article presents a Ku-band power amplifier with a series-shunt LC notch filter in 65-nm
CMOS. The notch filter is integrated into the inter-stage matching network to attenuate the …

A Very Low Phase-Noise Transformer-Coupled Oscillator and PLL for 5G Communications in 0.12 m SiGe BiCMOS

E Wagner, O Shana'a… - IEEE transactions on …, 2019 - ieeexplore.ieee.org
This article presents a 9.9-12.45 GHz voltage-controlled oscillator (VCO) designed in 0.12
μm SiGe BiCMOS with a focus on achieving the lowest possible phase noise using only a …

A 42–62 GHz transformer-based broadband mm-wave InP PA with second-harmonic waveform engineering and enhanced linearity

Z Liu, T Sharma, CR Chappidi… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
Indium phosphide (InP) heterojunction bipolar transistors (HBTs) with of 350/675 GHz are
studied and explored for a linear, high efficiency and broadband power amplifiers (PAs) at …