Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide
A novel design consisting of a thick InGaN waveguide is proposed to fully eliminate leakage
to the GaN substrate in nitride laser diodes. The design is based on the effective refractive …
to the GaN substrate in nitride laser diodes. The design is based on the effective refractive …
Refractive index of heavily germanium-doped gallium nitride measured by spectral reflectometry and ellipsometry
Gallium nitride (GaN) doped with germanium at a level of 1020 cm− 3 is proposed as a
viable material for cladding layers in blue-and green-emitting laser diodes. Spectral …
viable material for cladding layers in blue-and green-emitting laser diodes. Spectral …
Electrically pumped blue laser diodes with nanoporous bottom cladding
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with
nanoporous bottom cladding grown by plasma-assisted molecular beam epitaxy on c-plane …
nanoporous bottom cladding grown by plasma-assisted molecular beam epitaxy on c-plane …
High nitrogen pressure solution growth of GaN
M Bockowski - Japanese Journal of Applied Physics, 2014 - iopscience.iop.org
Results of GaN growth from gallium solution under high nitrogen pressure are presented.
Basic of the high nitrogen pressure solution (HNPS) growth method is described. A new …
Basic of the high nitrogen pressure solution (HNPS) growth method is described. A new …
Fabrication of GaN-air channels for embedded photonic structures
M Sawicka, O Gołyga, N Fiuczek, G Muzioł… - Materials Science in …, 2023 - Elsevier
Refractive index engineering is a key element in the design of optoelectronic device
structures. In this work we present a method for the fabrication of buried hollow channels …
structures. In this work we present a method for the fabrication of buried hollow channels …
Cavity designs for nitride VCSELs with dielectric DBRs operating efficiently at different temperatures
RP Sarzała, P Śpiewak, W Nakwaski… - Optics & Laser …, 2020 - Elsevier
This study set out to analyze the performance of modern nitride GaN-based tunnel-junction
vertical-cavity surface-emitting lasers (VCSELs) at various ambient and elevated …
vertical-cavity surface-emitting lasers (VCSELs) at various ambient and elevated …
InGaN laser diodes with reduced AlGaN cladding thickness fabricated on GaN plasmonic substrate
We demonstrate InGaN laser diodes with substantially reduced thickness of their bottom
AlGaN cladding grown on plasmonic GaN substrate. The electron concentration in …
AlGaN cladding grown on plasmonic GaN substrate. The electron concentration in …
Laser diodes grown on porous GaN by plasma-assisted molecular beam epitaxy
Porous GaN has been proposed as a novel cladding material for visible light-emitting laser
diodes (LDs). Fabrication of nanoporous-GaN bottom-cladding LDs was already realized by …
diodes (LDs). Fabrication of nanoporous-GaN bottom-cladding LDs was already realized by …
Influence of resonator length on performance of nitride TJ VCSEL
RP Sarzała, P Śpiewak… - IEEE Journal of Quantum …, 2019 - ieeexplore.ieee.org
This paper presents computer simulations of nitride-based tunnel-junction (TJ) vertical-cavity
surface emitting lasers (VCSELs). The analyzed structures are non-polar continuous wave …
surface emitting lasers (VCSELs). The analyzed structures are non-polar continuous wave …
High reflectivity hybrid AlGaN/Silver distributed bragg reflectors for use in the UV-visible spectrum
Indium-free AlGaN-based distributed Bragg reflectors (DBRs) in the UV spectrum are known
to have very low reflectivities due both to the low refractive index contrast as well as …
to have very low reflectivities due both to the low refractive index contrast as well as …