This work investigates the suppressed distortion and improved analog/linearity performance
metrics of gate all around (GAA) Gallium Nitride (GaN)/Al2O3 Nanowire (NW) n-channel …

Lateral III–V nanowire (NW) MOSFETs are a promising candidate for high-frequency
electronics. However, their circuit performance is not yet assessed. Here, we integrate lateral …

In this paper, we investigated the tri-gate In x Ga 1− x As high electron mobility transistors
(HEMTs) with different indium compositions for low noise applications. The tri-gate …

In this work, the effect of self-heating on small-signal parameters of In 0.53 Ga 0.47 As based
gate-all-around nanowire MOSFETs is explored using thermally calibrated simulation …

To fulfill the increasing demand for high-speed electronics used for computation or
communication is one everlasting challenge for the semiconductor industry. Emerging fields …

Silicon germanium heterojunction bipolar transistors (SiGe HBTs) are rapidly evolving due
to current communication systems'(4G, 5G & 6G) increased functionality and speed. Since …

As high technology device patterns are continuing to move towards decreasing critical
dimensions and increasing pattern density, there is a need for lithography to move in the …

III-V semiconductor nanowires are highly promising building blocks for various applications.
However, the full potential of nanowire-based devices will only be realized if the nanowire …

This work investigates the suppressed distortion performance metrics of gate all around
(GAA) Gallium Nitride (GaN)/Al 2 O 3 Nanowire (NW) n-channel MOSFET (GaNNW/Al 2 O 3 …

The idea of reducing the gate length of the metal-oxide semiconductor field-effect transistor
(MOSFET) has been the leading stimulus for the growth of the integrated circuit industry …