Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical …

J Ajayan, D Nirmal, P Mohankumar, B Mounika… - Materials Science in …, 2022 - Elsevier
In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …

Gallium nitride vertical power devices on foreign substrates: A review and outlook

Y Zhang, A Dadgar, T Palacios - Journal of Physics D: Applied …, 2018 - iopscience.iop.org
Vertical gallium nitride (GaN) power devices have attracted increased attention due to their
superior high-voltage and high-current capacity as well as easier thermal management than …

GaN-based power devices: Physics, reliability, and perspectives

M Meneghini, C De Santi, I Abid, M Buffolo… - Journal of Applied …, 2021 - pubs.aip.org
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

Deep reinforcement learning-based energy-efficient edge computing for internet of vehicles

X Kong, G Duan, M Hou, G Shen… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
Mobile network operators (MNOs) allocate computing and caching resources for mobile
users by deploying a central control system. Existing studies mainly use programming and …

Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review

B Mounika, J Ajayan, S Bhattacharya, D Nirmal - Micro and Nanostructures, 2022 - Elsevier
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …

Safe: Synergic data filtering for federated learning in cloud-edge computing

X Xu, H Li, Z Li, X Zhou - IEEE Transactions on Industrial …, 2022 - ieeexplore.ieee.org
With the increasing data scale in the Industrial Internet of Things, edge computing
coordinated with machine learning is regarded as an effective way to raise the novel latency …

Review of power electronics components at cryogenic temperatures

H Gui, R Chen, J Niu, Z Zhang… - IEEE transactions on …, 2019 - ieeexplore.ieee.org
In order to apply power electronics systems to applications such as superconducting
systems under cryogenic temperatures, it is necessary to investigate the characteristics of …

GaN FinFETs and trigate devices for power and RF applications: Review and perspective

Y Zhang, A Zubair, Z Liu, M **ao… - Semiconductor …, 2021 - iopscience.iop.org
Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …

Electronic surface and dielectric interface states on GaN and AlGaN

BS Eller, J Yang, RJ Nemanich - … of Vacuum Science & Technology A, 2013 - pubs.aip.org
GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …

Nanoplasma-enabled picosecond switches for ultrafast electronics

M Samizadeh Nikoo, A Jafari, N Perera, M Zhu… - Nature, 2020 - nature.com
The broad applications of ultrawide-band signals and terahertz waves in quantum
measurements,, imaging and sensing techniques,, advanced biological treatments, and very …