76–81-GHz CMOS transmitter with a phase-locked-loop-based multichirp modulator for automotive radar
This paper presents the design of a linear frequency-modulated continuous-wave (FMCW)
radar transmitter (TX) for automotive radar applications. The TX has a wide operating range …
radar transmitter (TX) for automotive radar applications. The TX has a wide operating range …
Second-order equivalent circuits for the design of doubly-tuned transformer matching networks
The doubly-tuned magnetic transformer, comprising coupled inductors shunted by
capacitors, is today widely in use as interstage network and for impedance matching in …
capacitors, is today widely in use as interstage network and for impedance matching in …
A 77-GHz CMOS power amplifier with a parallel power combiner based on transmission-line transformer
This paper presents a 77-GHz CMOS power amplifier (PA) with a parallel power combiner
based on a transmission-line transformer (TLT). An inter-stage matched cascode power cell …
based on a transmission-line transformer (TLT). An inter-stage matched cascode power cell …
Integrated bias circuits of RF CMOS cascode power amplifier for linearity enhancement
B Koo, Y Na, S Hong - IEEE Transactions on Microwave Theory …, 2012 - ieeexplore.ieee.org
This paper presents a highly linear differential cascode CMOS power amplifier (PA) with
gate bias circuits in Common Source (CS) and Common Gate (CG) amplifiers. The proposed …
gate bias circuits in Common Source (CS) and Common Gate (CG) amplifiers. The proposed …
A 28/38 GHz dual-band power amplifier for 5G communication
This work presents a 28/38 GHz dual-band power amplifier (PA) for fifth-generation (5G)
communication. In this work, a T-topology-matching network is proposed at the output for its …
communication. In this work, a T-topology-matching network is proposed at the output for its …
A broadband stacked power amplifier in 45-nm CMOS SOI technology
A fully integrated broadband power amplifier (PA) is implemented in a standard 45-nm
CMOS SOI technology. The PA is designed using a dynamically biased stacked SOI …
CMOS SOI technology. The PA is designed using a dynamically biased stacked SOI …
A High-Power Packaged Four-Element -Band Phased-Array Transmitter in CMOS for Radar and Communication Systems
This paper presents a four-element X-band phased-array transmitter in 0.13-μm CMOS. The
design is based on the all-RF architecture and contains a 5-bit phase shifter (lowest bit is …
design is based on the all-RF architecture and contains a 5-bit phase shifter (lowest bit is …
A full X-band phased-array transmit/receive module chip in 65-nm CMOS technology
In this paper, we present a phased-array transceiver chip operating in full X-band (8-12
GHz) in 65-nm CMOS technology. The presented transceiver for the transmit/receive module …
GHz) in 65-nm CMOS technology. The presented transceiver for the transmit/receive module …
Design and Implementation of Wideband Stacked Distributed Power Amplifier in 0.13- CMOS Using Uniform Distributed Topology
MM Tarar, R Negra - IEEE Transactions on Microwave Theory …, 2017 - ieeexplore.ieee.org
This paper presents the design and implementation of efficient and wideband stacked
distributed power amplifiers (SDPAs) in 0.13-μm CMOS technology. To obtain high output …
distributed power amplifiers (SDPAs) in 0.13-μm CMOS technology. To obtain high output …
A 25.1 dBm 25.9-dB gain 25.4% PAE X-band power amplifier utilizing voltage combining transformer in 65-nm CMOS
We present an X-band two-stage power amplifier (PA) in 65-nm CMOS process using a
transformer (TF)-based voltage combining technique (VTC) which achieves the highest …
transformer (TF)-based voltage combining technique (VTC) which achieves the highest …