Hybrid spintronic materials: Growth, structure and properties

W Liu, PKJ Wong, Y Xu - Progress in Materials Science, 2019 - Elsevier
Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or
in addition to charge-only-based physical phenomena. Since the discovery of giant …

Manganese-based permanent magnet materials

T Keller, I Baker - Progress in Materials Science, 2022 - Elsevier
Manganese-based permanent magnetic materials have become an area of significant
research activity in recent years as a potential alternative to permanent magnets based on …

Anomalous Nernst effect in L10-FePt/MnGa thermopiles for new thermoelectric applications

Y Sakuraba, K Hasegawa, M Mizuguchi… - Applied physics …, 2013 - iopscience.iop.org
We propose a new-type of thermopile consisting of two ferromagnetic materials with
anomalous Nernst effects (ANEs) of opposite signs. L1 0-FePt and L1 0-MnGa have been …

Material dependence of anomalous Nernst effect in perpendicularly magnetized ordered-alloy thin films

K Hasegawa, M Mizuguchi, Y Sakuraba… - Applied Physics …, 2015 - pubs.aip.org
Material dependence of the anomalous Nernst effect (ANE) in perpendicularly magnetized
ordered-alloy thin films is systematically investigated. The ANE was found to have a …

Multifunctional L10‐Mn1.5Ga Films with Ultrahigh Coercivity, Giant Perpendicular Magnetocrystalline Anisotropy and Large Magnetic Energy Product

L Zhu, S Nie, K Meng, D Pan, J Zhao… - Advanced …, 2012 - Wiley Online Library
Magnetic materials with high coercivity (Hc), perpendicular magnetic anisotropy (PMA) and
magnetic energy product have great application potential in ultrahigh-density perpendicular …

Strain induced enhancement of perpendicular magnetic anisotropy in Co/graphene and Co/BN heterostructures

BS Yang, J Zhang, LN Jiang, WZ Chen, P Tang… - Physical Review B, 2017 - APS
Perpendicular magnetic tunnel junctions in the next-generation magnetic memory using
current induced magnetization switching will likely rely on a material design that can …

Magnetic and electronic properties of D22-Mn3Ge (001) films

H Kurt, N Baadji, K Rode, M Venkatesan… - Applied Physics …, 2012 - pubs.aip.org
Oriented thin films of Mn 3 Ge with the tetragonal D0 22 structure, grown on strontium
titanate substrates, exhibit a low magnetization M s= 73 kA m− 1 combined with high …

Insight into half-metallicity, spin-polarization and mechanical properties of L21 structured MnY2Z (Z= Al, Si, Ga, Ge, Sn, Sb) Heusler alloys

S Yousuf, DC Gupta - Journal of Alloys and Compounds, 2018 - Elsevier
We have investigated electronic structure, magnetism and mechanical properties of L2 1
structured Heusler alloys within the framework of First-principles method. Highly spin …

Perpendicularly Magnetized MnxGa‐Based Magnetic Tunnel Junctions: Materials, Mechanisms, Performances, and Potential Applications

X Zhao, J Zhao - Advanced Materials Interfaces, 2022 - Wiley Online Library
Magnetic tunnel junctions (MTJs) exhibit a great profusion of unique functional properties,
such as nonvolatility, scalability, high endurance, and low power consumption. For this …

Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer

KZ Suzuki, R Ranjbar, J Okabayashi, Y Miura… - Scientific Reports, 2016 - nature.com
A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device
for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy …