Band parameters for III–V compound semiconductors and their alloys
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …
established commercial technologies, as well as new cutting-edge classes of electronic and …
MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors
H Yang, Y Zheng, Z Tang, N Li, X Zhou… - Journal of Physics D …, 2020 - iopscience.iop.org
We report on the effects of two different molecular beam epitaxy growth modes on the
performance of In 0.14 Ga 0.86 As/GaAs quantum well infrared photodetectors (QWIPs). The …
performance of In 0.14 Ga 0.86 As/GaAs quantum well infrared photodetectors (QWIPs). The …
Effects of strain and composition distribution on the optical characteristics of GaAs/InGaAlAs/GaAs double asymmetric tunnel-coupled quantum wells
S Khazanova, A Bobrov, A Nezhdanov, K Sidorenko… - Optical Materials, 2024 - Elsevier
Using a comprehensive approach that includes structural, optical, and theoretical studies,
this work offers research demonstrating the capability to evaluate the individual and total …
this work offers research demonstrating the capability to evaluate the individual and total …
Determination of band offsets in strained quantum wells by capacitance-voltage profiling and Schrödinger-Poisson self-consistent simulation
VI Zubkov, MA Melnik, AV Solomonov, EO Tsvelev… - Physical Review B …, 2004 - APS
The results of capacitance-voltage profiling and numerical simulation of charge carrier
distribution and energy states for strained quantum wells In x Ga 1− x As∕ GaAs (0.06⩽ x⩽ …
distribution and energy states for strained quantum wells In x Ga 1− x As∕ GaAs (0.06⩽ x⩽ …
Диагностика полупроводниковых наногетероструктур методами спектроскопии адмиттанса
ВИ Зубков - 2007 - elibrary.ru
Изложены теоретические основы адмиттансных методов исследования
полупроводников и базирующиеся на них методы диагностики квантово-размерных …
полупроводников и базирующиеся на них методы диагностики квантово-размерных …
Integrated fabrication of a high strain InGaAs/GaAs quantum well structure under variable temperature and improvement of properties using MOCVD technology
Q Wang, H Wang, B Zhang, X Wang, W Liu… - Optical Materials …, 2021 - opg.optica.org
An InGaAs/GaAs quantum well (QW) structure was prepared by metal-organic chemical
vapor deposition (MOCVD) via a new growth method, where the InGaAs well layer and the …
vapor deposition (MOCVD) via a new growth method, where the InGaAs well layer and the …
Photoreflectance determination of the wetting layer thickness in the InxGa1− xAs∕ GaAs quantum dot system for a broad indium content range of 0.3–1
We have investigated a set of In x Ga 1− x As∕ Ga As quantum dot structures grown by solid
source molecular beam epitaxy for a wide range of In content ranging from 30% to pure In …
source molecular beam epitaxy for a wide range of In content ranging from 30% to pure In …
Wetting layer states of InAs∕ GaAs self-assembled quantum dot structures: Effect of intermixing and cap** layer
The authors present a modulated reflectivity study of the wetting layer (WL) states in
molecular beam epitaxy grown In As∕ Ga As quantum dot (QD) structures designed to emit …
molecular beam epitaxy grown In As∕ Ga As quantum dot (QD) structures designed to emit …
Influence of surface segregation on the optical properties of semiconductor quantum wells
We studied the influence of surface segregation on optical properties of semiconductor
quantum wells. This effect leads to significant deviations of composition profiles from …
quantum wells. This effect leads to significant deviations of composition profiles from …
Optical properties of low-strained InxGa1− xAs∕ GaAs quantum dot structures at the two-dimensional–three-dimensional growth transition
In x Ga 1− x As∕ Ga As quantum dots (QDs) were grown by solid source molecular beam
epitaxy for indium contents of around 30%, which assures the QD growth in the very low …
epitaxy for indium contents of around 30%, which assures the QD growth in the very low …