The demand for improved electronic and optoelectronic devices has fuelled the
development of epitaxial growth techniques for single-crystalline semiconductors. However …

This article reviews the history and current progress in high-mobility strained Si, SiGe, and
Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by …

Two-dimensional (2D) materials, particularly black phosphorus (bP), have demonstrated
themselves to be excellent candidates for high-performance infrared photodetectors and …

The mechanical response of materials with spatial gradients in composition and structure is
of considerable interest in disciplines as diverse as tribology, geology, optoelectronics …

A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length,
strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/CDO for high …

Silicon-based heterostructures have come a long way from the discovery of strain as a new
and essential parameter for band structure engineering to the present state of electron and …

The processing, mechanical analysis, and performance of functionally graded materials
containing a metallic phase is reviewed in two parts. This first part focuses on processing …

A method of controlling threading dislocation densities in Ge on Si involving graded SiGe
layers and chemical-mechanical polishing (CMP) is presented. This method has allowed us …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

Control of band discontinuities in semiconductor heterostructures may introduce a new
important degree of freedom in the design of heterojunction devices and allow independent …