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Defect engineering in SiC technology for high-voltage power devices
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Dislocations in 4H silicon carbide
Owing to the superior properties of the wide bandgap, high carrier mobility, high thermal
conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for …
conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for …
Current status and perspectives of ultrahigh-voltage SiC power devices
Recent progress in the SiC material and ultrahigh-voltage devices is reviewed. Regarding
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …
Growth of Shockley type stacking faults upon forward degradation in 4H-SiC pin diodes
The growth of Shockley type stacking faults in pin diodes fabricated on the C-face of 4H-SiC
during forward current operation was investigated using Berg-Barrett X-ray topography and …
during forward current operation was investigated using Berg-Barrett X-ray topography and …
Nucleation of threading dislocations in 4H-SiC at early physical-vapor-transport growth stage
In this work, we identify the nucleation mechanism of threading dislocations (TDs)
associated with stacking faults (SFs) and 15R-SiC at the early growth stage of 4H-SiC single …
associated with stacking faults (SFs) and 15R-SiC at the early growth stage of 4H-SiC single …
[HTML][HTML] Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress
K Konishi, S Yamamoto, S Nakata… - Journal of Applied …, 2013 - pubs.aip.org
We evaluate the stacking faults (SFs) expansion from basal plane dislocations (BPDs)
converted into threading edge dislocations (TEDs) under the current stress to the pn devices …
converted into threading edge dislocations (TEDs) under the current stress to the pn devices …
Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC
The contrast features of synchrotron X-ray topographic images of screw-type basal plane
dislocations (BPDs) in on-axis 4H-SiC wafers have been studied. Screw BPD images are …
dislocations (BPDs) in on-axis 4H-SiC wafers have been studied. Screw BPD images are …
Conversion of basal plane dislocations to threading edge dislocations in 4H-SiC epilayers by high temperature annealing
X Zhang, H Tsuchida - Journal of applied physics, 2012 - pubs.aip.org
Conversion of basal plane dislocations (BPDs) to threading edge dislocations (TEDs) is
found in 4H-SiC epilayers after being annealed simply at high temperatures. Grazing …
found in 4H-SiC epilayers after being annealed simply at high temperatures. Grazing …
In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals
Abstract 4H silicon carbide (4H-SiC) is one of the most promising candidates in high-power
and high-frequency devices, owing to its excellent properties such as wide bandgap, high …
and high-frequency devices, owing to its excellent properties such as wide bandgap, high …
Direct confirmation of structural differences in single Shockley stacking faults expanding from different origins in 4H-SiC PiN diodes
J Nishio, A Okada, C Ota, R Iijima - Journal of Applied Physics, 2020 - pubs.aip.org
Structural differences are investigated in partial dislocations that have considerably different
threshold current densities for single Shockley-type stacking fault (1SSF) expansions in PiN …
threshold current densities for single Shockley-type stacking fault (1SSF) expansions in PiN …