Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy
Semiconductor nanowires have been identified as a viable technology for next-generation
infrared (IR) photodetectors with improved detectivity and detection across a range of …
infrared (IR) photodetectors with improved detectivity and detection across a range of …
Modeling of the growth rate, electrical and optical properties of GaAsSb nanowires
MR Karim - 2017 - search.proquest.com
GaAsSb nanowires have attracted much attention due to its bandgap tunability over a wide
range from 0.73 eV to 1.42 eV, the possibility of both type I and type II band alignments with …
range from 0.73 eV to 1.42 eV, the possibility of both type I and type II band alignments with …