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[HTML][HTML] Wide bandgap semiconductor-based integrated circuits
Wide-bandgap semiconductors exhibit much larger energy bandgaps than traditional
semiconductors such as silicon, rendering them very promising to be applied in the fields of …
semiconductors such as silicon, rendering them very promising to be applied in the fields of …
[HTML][HTML] Power electronics revolutionized: A comprehensive analysis of emerging wide and ultrawide bandgap devices
This article provides a comprehensive review of wide and ultrawide bandgap power
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …
Chemical–mechanical polishing of 4H silicon carbide wafers
Abstract 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐
frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local …
frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local …
[HTML][HTML] Technology and applications of wide bandgap semiconductor materials: current state and future trends
Silicon (Si)-based semiconductor devices have long dominated the power electronics
industry and are used in almost every application involving power conversion. Examples of …
industry and are used in almost every application involving power conversion. Examples of …
[HTML][HTML] Recent advances in silicon carbide chemical mechanical polishing technologies
Chemical mechanical polishing (CMP) is a well-known technology that can produce
surfaces with outstanding global planarization without subsurface damage. A good CMP …
surfaces with outstanding global planarization without subsurface damage. A good CMP …
[HTML][HTML] Review of solid-state transformer applications on electric vehicle DC ultra-fast charging station
The emergence of DC fast chargers for electric vehicle batteries (EVBs) has prompted the
design of ad-hoc microgrids (MGs), in which the use of a solid-state transformer (SST) …
design of ad-hoc microgrids (MGs), in which the use of a solid-state transformer (SST) …
A comprehensive review of diamond wire sawing process for single-crystal hard and brittle materials
Diamond wire sawing (DWS) is the primary stage in the semiconductor industry for slicing
hard and brittle materials, delivering high surface quality with minimum kerf losses. Despite …
hard and brittle materials, delivering high surface quality with minimum kerf losses. Despite …
The chip generation and removal mechanisms of thermal-assisted polishing monocrystalline 4 H-SiC
The chip generation and removal characteristic of SiC in thermal-assisted nano-abrasion
are investigated using molecular dynamics simulation. Varieties of minimum uncut chip …
are investigated using molecular dynamics simulation. Varieties of minimum uncut chip …
[HTML][HTML] A comprehensive investigation on the physical properties of SiC polymorphs for high-temperature applications: A DFT study based on GGA and hybrid HSE06 …
This investigation reports the structural, electronic, bonding, elastic, mechanical,
thermodynamic, thermal and optical characteristics of SiC polymorphs by DFT based GGA …
thermodynamic, thermal and optical characteristics of SiC polymorphs by DFT based GGA …
Controlled spalling of 4H silicon carbide with investigated spin coherence for quantum engineering integration
We detail scientific and engineering advances which enable the controlled spalling and
layer transfer of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's …
layer transfer of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's …