Ultrahigh Photoresponsivity of W/Graphene/β-Ga2O3 Schottky Barrier Deep Ultraviolet Photodiodes
The integration of graphene with semiconductor materials has been studied for develo**
advanced electronic and optoelectronic devices. Here, we propose ultrahigh …
advanced electronic and optoelectronic devices. Here, we propose ultrahigh …
Enhancing β-Ga2O3-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion on c-plane sapphire substrate
G Wang, H Wang, T Chen, Y Feng, H Zeng… - …, 2023 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3) possesses a band gap of approximately 4.9 eV, aligning
its detection wavelength within the solar-blind region, making it an ideal semiconductor …
its detection wavelength within the solar-blind region, making it an ideal semiconductor …
Review of β-Ga2O3 solar-blind ultraviolet photodetector: growth, device, and application
H Chen, Z Li, Z Zhang, D Liu, L Zeng… - Semiconductor …, 2024 - iopscience.iop.org
Due to the excellent responsivity and high rejection ratio, Ga 2 O 3-based solar-blind
ultraviolet photodetectors (PDs) are attracting more and more attention. The excellent …
ultraviolet photodetectors (PDs) are attracting more and more attention. The excellent …
Improvement of β-Ga2O3-based Schottky barrier UV photodetector by 4H-SiC substrate, intrinsic buffer layer, and graphene surface contact
R Cherroun, A Meftah, N Sengouga, M Labed… - Journal of Materials …, 2024 - Springer
This work presents a study of a β-Ga 2 O 3-based Schottky barrier UV photodetector (SB UV-
PD) with careful concern for material properties, device structure, and optimization …
PD) with careful concern for material properties, device structure, and optimization …
Effects of Annealing Atmosphere on the Performance of Ga2o3 Films on Si Substrates Deposited by Radio Frequency Magnetron Sputtering
G Wang, H Wang, T Chen, Y Wang, Y Feng… - Available at SSRN … - papers.ssrn.com
Abstract Gallium oxide (Ga2O3) is considered as one of the most promising ultrawide-
bandgap semiconductor materials. Thus, the integration of Ga2O3 film–based optoelectronic …
bandgap semiconductor materials. Thus, the integration of Ga2O3 film–based optoelectronic …
[PDF][PDF] Study of solar blind photodetector based on beta gallium oxide (ꞵ-Ga₂O₃)
A NOUMIDIA - archives.univ-biskra.dz
In recent years, the solar-blind photodetectors based on ꞵ-Ga₂O₃ are attractive due to
their simple fabrication process and its photodetection performance. Our study is about …
their simple fabrication process and its photodetection performance. Our study is about …
Improving the Performance of Β-Ga2o3 Film Ultraviolet Detectors by Using Seed Layer
Y Yang, G Wang, H Wang, T Chen, Y Feng… - Available at SSRN … - papers.ssrn.com
In this paper, a Ga2O3 seed layer was pre-deposited on sapphire substrate by combing RF
magnetron sputtering and post annealing to improve the performance of β-Ga2O3 ultraviolet …
magnetron sputtering and post annealing to improve the performance of β-Ga2O3 ultraviolet …