Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

III-V compound semiconductors (SC) have played a crucial role in the development of
optoelectronic devices for a broad range of applications. Major applications of InP or GaAs …

Reliable, efficient electrically pumped silicon-based lasers would enable full integration of
photonic and electronic circuits, but have previously only been realized by wafer bonding …

The realization of semiconductor laser diodes on Si substrates would permit the creation of
complex optoelectronic circuits, enabling chip-to-chip and system-to-system optical …

We report the first room-temperature continuous-wave operation of III-V quantum-dot laser
diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot …

Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources
for the generation of picosecond and femtosecond pulses and/or broad frequency combs …

Self-assembled semiconductor quantum dots (QDs) exhibit fully quantized electronic states
and high radiative efficiencies. This makes them highly suitable both for fundamental …

III-V semiconductors monolithically grown on Si substrates are expected to be an ideal
solution to integrate highly efficient light-emitting devices on a Si platform. However, the …

Heteroepitaxy of III–V compound semiconductors on industry standard (001) silicon (Si)
substrates is highly desirable for large-scale electronic and photonic integrated circuits …

We describe the initial efforts to use molecular beam epitaxy to grow InAs quantum dots on
GaAs via the Stranski–Krastanov transition and then discuss the initial efforts to use these …